參數(shù)資料
型號(hào): FMMT493
廠商: ZETEX PLC
元件分類: 小信號(hào)晶體管
英文描述: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
中文描述: 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: SOT-23, 3 PIN
文件頁(yè)數(shù): 1/2頁(yè)
文件大小: 123K
代理商: FMMT493
SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - NOVEMBER 1995
%
COMPLEMENTARY TYPE
FMMT593
PARTMARKING DETAIL
493
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
120
V
Collector-Emitter Voltage
V
CEO
100
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
1
A
Peak Pulse Current
I
CM
2
A
Base Current
I
B
200
mA
Power Dissipation at T
amb
=25°C
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Breakdown Voltages
V
(BR)CBO
120
V
I
C
=100
μ
A
V
CEO(sus)
100
V
I
C
=10mA*
I
E
=100
μ
A
V
(BR)EBO
5
V
Collector Cut-Off Current
I
CBO
100
nA
V
CB
=100V
Collector Cut-Off Current
I
CES
100
nA
V
CES
=100V
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=4V
Saturation Voltages
V
CE(sat)
0.3
0.6
V
V
I
C
=500mA, I
=50mA
I
C
=1A, I
B
=100mA
V
BE(sat)
1.15
V
I
C
=1A, I
B
=100mA
Base-Emitter
Turn On Voltage
V
BE(on)
1.0
V
I
C
=1A, V
CE
=10V
Static Forward Current
Transfer Ratio
h
FE
100
100
60
20
300
I
C
=1mA, V
=10V*
I
C
=250mA, V
CE
=10V*
I
C
=500mA, V
=10V*
I
C
=1A, V
CE
=10V*
Transition Frequency
f
T
150
MHz
I
=50mA, V
CE
=10V
f=100MHz
Collector-Base
Breakdown Voltage
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
2%
C
obo
10
pF
V
CB
=10V, f=1MHz
FMMT493
C
B
E
SOT23
3 - 119
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