參數(shù)資料
型號: FMMT455
廠商: ZETEX PLC
元件分類: 小信號晶體管
英文描述: NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
中文描述: 1000 mA, 140 V, NPN, Si, SMALL SIGNAL TRANSISTOR
文件頁數(shù): 1/2頁
文件大小: 136K
代理商: FMMT455
SOT23 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 3 FEBRUARY 1996
FEATURES
*
140 Volt V
CEO
*
1 Amp continuous current
*
P
tot
= 500 mW
PARTMARKING DETAIL
455
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
160
V
Collector-Emitter Voltage
140
V
Emitter-Base Voltage
5
V
Peak Pulse Current
2
A
Continuous Collector Current
1
A
Base Current
200
mA
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
500
mW
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
160
V
I
C
=100
μ
A
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
140
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
μ
A
Collector Cut-Off Current
I
CBO
0.1
μ
A
V
CB
=140V
Emitter Cut-Off Current
I
EBO
0.1
μ
A
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.7
V
I
C
=150mA, I
B
=15mA
Static Forward Current
Transfer Ratio
h
FE
100
10 Typ
300
I
C
=150mA, V
=10V*
I
C
=1A, V
CE
=10V*
Transition
Frequency
f
T
100
MHz
I
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
15
pF
V
CB
=10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FMMT455
SOT23
C
B
E
3 - 110
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