參數(shù)資料
型號: FMM5822VU
廠商: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
英文描述: K-Band Power Amplifier MMIC
中文描述: K波段單片功率放大器
文件頁數(shù): 1/16頁
文件大?。?/td> 227K
代理商: FMM5822VU
X-Band Power Amplifier MMIC
Edition 1.2
June 2005
1
ES/EMM5068VU
Device
の寫真
Preliminary
FEATURES
High Output Power: Pout=33.0dBm (typ.)
High Linear Gain: G
L
=26.0dB (typ.)
Broad Band: 9.5-13.3GHz
Impedance Matched Zin/Zout=50
Ω
Small Hermetic Metal-Ceramic SMT Package(VU)
DESCRIPTION
The EMM5068VU is a MMIC amplifier that contains a three-stages
amplifier, internally matched, for standard communications band in the
9.5 to 13.3GHz frequency range.
Eudyna Devices’s stringent Quality Assurance Program assures the
highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING
Item
Drain-Source Voltage
Gate-Source Voltage
Input Power
Channel Temperature
Storage Temperature
Symbol
V
DD
V
GG
P
in
T
ch
T
stg
Unit
V
V
dBm
o
C
o
C
RECOMMENDED OPERATING CONDITIONS
Item
Drain-Source Voltage
Drain-Source Current
Input Power
Operating Case Temperature
ELECTRICAL CHARACTERISTICS (Case Temperature Ta=25
o
C)
Symbol
V
DD
I
DD
P
in
Top
Unit
V
mA
dBm
o
C
Unit
Min.
9.5
31
*1
28
*2
22
*1
20
*2
-
Typ.
-
33
*1
30
*2
25
*1
23
*2
21
*1
13
*2
-40
*3
1700
*1
2400
*1
1500
*2
2400
*2
-8
-8
Max.
13.3
-
-
-
-
-
Frequency Range
Output Power at 1dB G.C.P.
f
V
DD
=6V
I
DD
=1300mA
Z
s
=Z
l
=50ohm
*1:f=9.5~11.7GHz
*2:f=11.7~13.3GHz
GHz
dBm
P
1dB
Power Gain at 1dB G.C.P.
G
1dB
dB
Power-added Efficiency at 1dB G.C.P.
η
add
%
-
-
-
Third Order Intermodulation*
Drain Current at 1dB G.C.P.
IM
3
I
DD
*3:
f=10MHz ,
2-Tone Test,
P
out
=20dBm S.C.L.
-37
*3
-
-
-
-
dBc
mA
mA
dB
dB
Input Return Loss (at Pin=-20dBm)
Output Return Loss (at Pin=-20dBm)
RL
in
RL
out
-
-
G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level
Class 0
ESD
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k
)
CASE STYLE
VU
Rating
10
-3
26
+175
-55 to +125
6
1300
<=12
~ 199V
Conditions
Limits
Test Conditions
Item
Symbol
-40 to +85
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