Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not put this product into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
FUJITSU QUANTUM DEVICES
SINGAPORE PTE LTD.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui,
Kowloon, Hong Kong
TEL: +852-23770226
FAX: +852-23763269
FUJITSU QUANTUM DEVICES LIMITED
Business Development Division
11th Floor, Hachioji Daiichi-Seimei Bldg.
3-20-6 Myojin-cho
Hachioji-city, Tokyo 192-0046, Japan
TEL: +81-426-43-5885
FAX: +81-426-43-5582
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
2002 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI012002M200
CHIP OUTLINE
IC Chip Size(XxY):
1.44mm x 1.22mm (min.)
1.58mm x 1.36mm (max.)
IC Chip Thickness:
0.105mm (typ.)
Backside Metal:
Au
Pad Metal:
Au
(13)
Y
X
(14)
(15)
(16)
(01)
(02)
(03)
(04)
(05)
(06)
(07)
(08)
(09)
(10)
(11)
(12)
(17)
4
10.0Gb/s Trans-Impedance
Amplifier
FMM3307X