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參數(shù)資料
| 型號： | FMG4A |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | General purpose (dual digital transistors) |
| 中文描述： | 通用（雙數(shù)字晶體管） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 67K |
| 代理商： | FMG4A |
EMG4 / EMH4 / UMG4N / UMH4N / UMH8N /
Transistors
FMG4A / IMH4A / IMH8A
General purpose (dual digital transistors)
EMG4 / EMH4 / UMG4N / UMH4N / UMH8N
FMG4A / IMH4A / IMH8A
!
Features
1) Two DTC114T chips in a EMT or UMT or SMT package.
!
Equivalent circuits
EMH4 / UMH4N
(2)
(3)
R
1
R
1
EMG4 / UMG4N
R
1
R
1
UMH8N
(3)
R
1
R
1
IMH4A
(4)
R
1
R
1
FMG4A
R
1
R
1
IMH8A
(4)
R
1
R
1
(1)
(1)
(1)
(2)
(4) (5)
(6)
(6)
(5)
(3) (2)
(1)
(4)
(5)
(6)
(6)
(5)
(3)
(2)
(1)
(3)
(2)
(4)
(5)/(6)
(5)
(3)
(4)
(2)
(1)
!
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limits
50
50
5
100
300(TOTAL)
150
55
~
+
150
150(TOTAL)
EMG4 / EMH4 / UMG4N / UMH4N / UMH8N
FMG4A / IMH4A / IMH8A
Unit
V
V
V
mA
mW
°
C
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power
dissipation
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
1
2
!
Electrical characteristics
(Ta=25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
R
1
Min.
50
50
5
100
7
Typ.
250
250
10
Max.
0.5
0.5
0.3
600
13
Unit
V
V
V
μ
A
μ
A
V
MHz
k
Conditions
Transition frequency
Input resistance
I
C
=
50
μ
A
I
=
1mA
I
E
=
50
μ
A
V
CB
=
50V
V
EB
=
4V
I
C
/I
B
=
10mA/1mA
V
CE
=
5V, I
C
=
1mA
V
CE
=
10V, I
E
=
5mA, f
=
100MHz
Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
相關(guān)PDF資料 |
PDF描述 |
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| FMG5A | Emitter common (dual digital transistors) |
| FMG6A | General purpose (dual digital transistors) |
| FMG6A | 14 POS DUAL ROW SOCKET |
| FMG7A | General Purpose(Dual Digital Transistor)(通用(雙數(shù)字晶體管)) |
| FMG8A | Emitter common (dual digital transistors) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FMG4AT148 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 DUAL NPN 50V 100MA RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| FMG4N | 制造商:ROHM 制造商全稱:Rohm 功能描述:General purpose (dual digital transistors) |
| FMG5A | 制造商:ROHM 制造商全稱:Rohm 功能描述:Emitter common (dual digital transistors) |
| FMG5AT148 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 DUAL NPN 50V 100MA RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| FMG5T149 | 制造商:ROHM Semiconductor 功能描述: |
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