參數(shù)資料
型號(hào)： FME-2106
廠商： Electronic Theatre Controls, Inc.
英文描述： Schottky Barrier Diodes
中文描述： 肖特基勢(shì)壘二極管
文件頁(yè)數(shù)： 2/2頁(yè)
文件大小： 92K
代理商： FME-2106
84
10
20
50
40
30
0 1
5
50
10
20ms
SPB-G34S
100
Case Temperature Tc
(
°
C)
95
105
110
115
120
125
0
1.0
0.5
2.0
1.5
2.5
3.0
V
R
=40V
D.C.
t/T=
t/T 1/3
=
t/T=
Sinewave
30
10
1
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
T
a
=
°
C
100
°
C
60
°
C
28
°
C
100
10
1
0.1
0.01
0.005
0
10
30
50
60
20
40
100
°
C
T
a
=
°
C
60
°
C
28
°
C
SPB-64S
10
20
50
40
30
0 1
5
50
10
20ms
30
10
1
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
100
10
1
0.1
0.01
0.001
0
10
30
50
60
20
40
80
70
90
100
110
120
130
0
1.0
2.0
3.0
4.0
5.0
6.0
V
R
=
40V
D.C.
t/T 1/6
=
t/T=
t/T=
Sinewave
T
a
125
°
C
=
100
°
C
60
°
C
27
°
C
100
°
C
T
a
=
°
C
60
°
C
27
°
C
10
20
50
40
30
60
0 1
5
50
10
20ms
SPB-G54S
80
Case Temperature Tc
(
°
C)
70
90
100
110
120
130
0
1.0
2.0
3.0
4.0
5.0
V
R
=40V
30
10
1
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
D.C.
t/T=
t/T=
t/T=
Sinewave
T
a
=
°
C
100
°
C
60
°
C
28
°
C
500
100
10
1
0.1
0.01
0.005
0
10
30
50
60
20
40
100
°
C
T
a
=
°
C
60
°
C
28
°
C
SPB-G56S
10
20
30
50
40
60
0 1
5
50
10
20ms
0
0.2
0.4
0.6
1.0
0.8
20
10
1
0.1
0.01
0.001
80
Case Temperature Tc
(
°
C)
70
90
100
110
120
130
0
2.0
1.0
3.0
4.0
6.0
5.0
V
R
=60V
D.C.
t/T=
t/T=
t/T 1/2
=
Sinewave
T
a
=
°
C
100
°
C
60
°
C
23
°
C
0
20
30
50
60
70
10
40
100
°
C
T
a
=
°
C
60
°
C
23
°
C
50
10
1
0.1
0.01
0.001
SPB-66S
0
1
2
3
4
6
5
100
110
Case Temperature Tc
(
°
C)
120
130
140
150
0
1
2
3
4
6
5
0
1
2
3
4
6
5
0
10
20
30
40
50
60
0
1
2
3
4
8
5
6
7
0
50
100
150
0
1
2
3
4
6
5
D.C.
Sinewave
t/T=1/2
t/T=1/3, Sinewave
t/T=1/6
D.C.
1
–
t/T=1/2
1
–
t/T=2/3
1
–
t/T=5/6
Tj=
150
°
C
T
t
t/T=1/2
t/T
=
1/2
t/T=1/3, Sinewave
t/T
=
1/3
t/T=1/6
t/T
=
1/6
D.C.
Tj=150
°
C
T
t
V
R
=0V
V
R
=
60V
Tj=
150
°
C
T
t
Sinewave
Tj
=150
°
C
T
t
I
F
I
F
I
F
I
F
Tc
—
I
F (AV)
Derating
A
F
(
Reverse Voltage V
R
(V)
R
R
(
V
R
—
I
R
Characteristics
(Typical)
Forward Voltage V
F
(V)
F
F
(
V
F
—
I
F
Characteristics
(Typical)
Overcurrent Cycles
P
F
(
I
FMS
Rating
Tc
—
I
F (AV)
Derating
A
F
(
Reverse Voltage V
R
(V)
R
R
(
V
R
—
I
R
Characteristics
(Typical)
Forward Voltage V
F
(V)
F
F
(
V
F
—
I
F
Characteristics
(Typical)
Overcurrent Cycles
P
F
(
I
FMS
Rating
Tc
—
I
F (AV)
Derating
A
F
(
Reverse Voltage V
R
(V)
R
R
(
V
R
—
I
R
Characteristics
(Typical)
Forward Voltage V
F
(V)
F
F
(
V
F
—
I
F
Characteristics
(Typical)
Overcurrent Cycles
P
F
(
I
FMS
Rating
Tc
—
I
F (AV)
Derating
Case Temperature Tc
(
°
C)
A
F
(
Reverse Voltage V
R
(V)
R
R
(
V
R
—
I
R
Characteristics
(Typical)
Forward Voltage V
F
(V)
F
F
(
V
F
—
I
F
Characteristics
(Typical)
Overcurrent Cycles
P
F
(
I
FMS
Rating
Tc
—
I
F (AV)
Derating
A
F
(
Tc
—
I
F (AV)
Derating
Case Temperature Tc
(
°
C)
A
F
(
Average Forward Current I
F(AV)
(A)
F
F
(
I
F(AV)
—
P
F
Characteristics
Reverse Voltage V
R
(V)
R
R
(
V
R
—
P
R
Characteristics
Characteristic Curves
Schottky Barrier Diodes
相關(guān)PDF資料
PDF描述
FMBB4148 200 mW EPITAXIAL PLANAR DIODES
FMC1A Power Management(Dual Digital Transistors)(電源管理(雙數(shù)字晶體管))
FMC7A Power Management(Dual Digital Transistors)(電源管理(雙數(shù)字晶體管))
FMC2A Power management (dual digital transistor)
FMC2 Epitaxial Planar Dual Mini-Mold PNP/NPN Silicon Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FME-210B 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:Schottky Barrier Diode
FME-220A 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:100V, 20A Schottky barrier diode in TO220F package
FME-220B 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:Schottky Barrier Diode
FME-230A 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:100V, 30A Schottky barrier diode in TO220F package
FME-2402 制造商:Pan Pacific 功能描述:
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*