參數(shù)資料
型號(hào)： FMC6G10US60
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： IGBT 晶體管
英文描述： Sweep Function Generator; Bandwidth Max:20MHz; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
中文描述： 10 A, 600 V, N-CHANNEL IGBT
封裝： 21PM-AA, 21 PIN
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 649K
代理商： FMC6G10US60
2001 Fairchild Semiconductor Corporation
June 2001
FMC6G10US60 Rev. A3
IGBT
F
FMC6G10US60
Compact & Complex Module
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters where short circuit
ruggedness is a required feature.
Features
UL Certified No. E209204
Short circuit rated 10us @ T
C
= 100
°
C, V
GE
= 15V
High speed switching
Low saturation voltage : V
CE
(sat) = 2.2 V @ I
C
= 10A
High input impedance
Built in 3 phase rectifier circuit
Fast & soft anti-parallel FWD
Applications
AC & DC motor controls
General purpose inverters
Robotics
Servo controls
Internal Circuit Diagram
R
S
T
P
P1
GU
EU
GU
GV
EV
GV
U
GW
EW
V
GW
W
E
N
B
Package Code : 21PM-AA
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
T
SC
V
RRM
I
O
Description
FMC7G10US60
600
± 20
10
20
10
20
36
10
1200
10
Units
V
V
A
A
A
A
W
us
V
A
Inverter
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Short Circuit Withstand Time
Repetitive Peak Reverse Voltage
Average Output Rectified Current
Surge Forward Current
@ 1Cycle at 60Hz, Peak value Non-Repetitive
1 Cycle Surge Current
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Mounting part Screw
@ T
C
= 25
°
C
@ T
C
= 100
°
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
Converter
I
FSM
100
A
I
2
t
T
J
T
STG
V
ISO
41
A
2
s
°
C
°
C
V
N.m
Common
-40 to +150
-40 to +125
2500
1.25
@ AC 1minute
@ M4
Mounting Torque
相關(guān)PDF資料
PDF描述
FMC6G15US60 Compact & Complex Module
FMC6G20US60 Multi-Function Generator RoHS Compliant: NA
FMC6G30US60 Function Generator; Bandwidth Max:120MHz; Amplitude Accuracy :0.01dB; Frequency Max:120MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
FMC6G50US60 Signal Generator; Signal Generator Type:ARB/Frequency/Signal; Bandwidth Max:21.5MHz; Modulation Type:Amplitude/Frequency; Sweep Rate Range:0 Hz to 21.5 MHz lin/log; Sweep Time Range:1 mSec to 60 Sec; Accuracy:0.001% Frequency
FMC7G15US60 Compact & Complex Module
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FMC6G15US60 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FMC6G20US60 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FMC6G30US60 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FMC6G50US60 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FMC700 制造商:Black Box Corporation 功能描述:CAT 7 OUTLET 4 PORT JACK
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