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參數(shù)資料
| 型號(hào)： | FM830-T |
| 廠商： | 美麗微半導(dǎo)體有限公司 |
| 英文描述： | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| 中文描述： | 肖特基二極管芯片-硅外延式龍門 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 78K |
| 代理商： | FM830-T |
FM820-T THRU FM840-T
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of ML-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDECDO-214AB
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.00585 ounce, 0.195 gram
(V)
(V)
(V)
(V)
(
o
C)
FM820-T
SS82
20
14
20
FM830-T
SS83
30
21
30
FM840-T
SS84
40
28
40
SYMBOLS
MARKING
CODE
-55 to +125
Operating
temperature
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
0.65
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.1
I
O
8.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
150
A
V
R
= V
RRM
T
A
= 25
o
C
5.0
mA
V
R
= V
RRM
T
A
= 100
o
C
50
mA
Thermal resistance
Junction to ambient
R
q
JA
55
o
C / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
C
J
700
pF
Storage temperature
T
STG
-55
+150
o
C
Reverse current
I
R
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Formosa MS
0.276(7.0)
0.260(6.6)
0.012(0.3) Typ.
0.189(4.8)
0.173(4.4)
0.244(6.2)
0.228(5.8)
0.087(2.2)
0.071(1.8)
0.040 (1.0) Typ.
0.040(1.0) Typ.
Dimensions in inches and (millimeters)
SMC-T
0.152(3.8)
0.144(3.6)
0.032(0.8) Typ.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FM840-T | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM820 | Silicon epitaxial planer type |
| FM830 | Silicon epitaxial planer type |
| FM840 | Silicon epitaxial planer type |
| FMBT3904 | NPN EPITAXIAL PLANAR TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM830-T1 | 制造商:PACELEADER 制造商全稱:PACELEADER INDUSTRIAL 功能描述:SILICON EPITAXIAL PLANCE TYPE |
| FM835-R2 | 制造商:Black Box Corporation 功能描述:RJ-45 Modular Splitters, 5-Position, 8 x 8, Shielded with 2.5" Cable, B Pinning |
| FM840 | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM840-B | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM840-T | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
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