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參數(shù)資料
| 型號(hào)： | FM5822-A |
| 廠商： | 美麗微半導(dǎo)體有限公司 |
| 英文描述： | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| 中文描述： | 肖特基二極管芯片-硅外延式龍門(mén) |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 67K |
| 代理商： | FM5822-A |
FM5822-A
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizng Flame
Retardant EpoxyMolding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.15 gram
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.1
I
O
3.0
A
IF = 1 A , T
A
= 25
o
C
V
F
0.42
V
IF = 2 A , T
A
= 25
o
C
V
F
0.49
V
IF = 1 A , T
A
= 125
o
C
V
F
0.34
V
IF = 2 A , T
A
= 125
o
C
V
F
0.43
V
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
80
A
peak reverse voltage
V
RRM
40
V
RMS voltage
V
RMS
28
V
Continuous reverse voltage
V
R
40
V
V
R
= V
RRM
T
A
= 25
o
C
0.5
mA
V
R
= V
RRM
T
A
= 125
o
C
20
mA
Thermal resistance
Junction to ambient
R
q
JA
80
o
C / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
C
J
250
pF
Operating temperature
T
J
-55
+150
o
C
Storage temperature
T
STG
-55
+150
o
C
Reverse current
I
R
Forward voltage
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Formosa MS
0.185(4.8)
0.173(4.4)
0.012(0.3) Typ.
0.110(2.8)
0.094(2.4)
0.165(4.2)
0.150(3.8)
0.067(1.7)
0.060(1.5)
0.040 (1.0) Typ.
0.040(1.0) Typ.
Dimensions in inches and (millimeters)
SMA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM5822-AL | 制造商:FORMOSA 制造商全稱(chēng):Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM5822-ALN | 制造商:FORMOSA 制造商全稱(chēng):Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM5822-AN | 制造商:FORMOSA 制造商全稱(chēng):Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM5822B | 制造商:RECTRON 制造商全稱(chēng):Rectron Semiconductor 功能描述:SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 3.0 Amperes |
| FM5822B-W | 功能描述:肖特基二極管與整流器 3A 40V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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