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參數資料
| 型號： | FM520-T |
| 廠商： | 美麗微半導體有限公司 |
| 英文描述： | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| 中文描述： | 肖特基二極管芯片-硅外延式龍門 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 80K |
| 代理商： | FM520-T |
FM520-T THRU FM5100-T
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizng Flame
Retardant EpoxyMolding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC DO-214AB
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.00585 ounce, 0.195 gram
(V)
(V)
(V)
(V)
(
o
C)
FM520-T
SS52
20
14
20
FM530-T
SS53
30
21
30
FM540-T
SS54
40
28
40
FM550-T
SS55
50
35
50
FM560-T
SS56
60
42
60
FM580-T
SS58
80
56
80
FM5100-T
S510
100
70
100
-55 to +150
0.70
0.85
Operating
temperature
V
F
*4
SYMBOLS
MARKING
CODE
0.55
-55 to +125
V
RRM
*1
V
RMS
*2
V
R
*3
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.1
I
O
5.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
150
A
V
R
= V
RRM
T
A
= 25
o
C
0.5
mA
V
R
= V
RRM
T
A
= 125
o
C
50
mA
Thermal resistance
Junction to ambient
R
q
JA
15
o
C / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
C
J
380
pF
Storage temperature
T
STG
-55
+150
o
C
Reverse current
I
R
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Formosa MS
0.276(7.0)
0.260(6.6)
0.012(0.3) Typ.
0.189(4.8)
0.173(4.4)
0.244(6.2)
0.228(5.8)
0.087(2.2)
0.071(1.8)
0.040 (1.0) Typ.
0.040(1.0) Typ.
Dimensions in inches and (millimeters)
SMC-T
0.152(3.8)
0.144(3.6)
0.032(0.8) Typ.
相關PDF資料 |
PDF描述 |
|---|---|
| FM530-T | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM540-T | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM550-T | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM560-T | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM580-T | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FM520-W | 功能描述:肖特基二極管與整流器 5A 20V RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| FM521 | 制造商:Black Box Corporation 功能描述:GIGASTATION + BLANK 1 U HIGH WHITE 5 PAK |
| FM523 | 制造商:Black Box Corporation 功能描述:GIGASTATION + BLANK 1.5 UHIGH ELEC IVORY 5 PAK |
| FM525 | 制造商:Black Box Corporation 功能描述:GIGASTATION + BLANK 1.5 UHIGH OFFICE WHITE 5 PAK |
| FM526 | 制造商:Black Box Corporation 功能描述:GIGASTATION + BLANK 1.5 UHIGH TEL IVORY 5 PAK |
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