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      參數(shù)資料
      型號: FM4003-L
      廠商: 美麗微半導(dǎo)體有限公司
      英文描述: Chip Silicon Rectifier - Glass passivated type
      中文描述: 硅整流芯片-玻璃鈍化型
      文件頁數(shù): 1/2頁
      文件大小: 69K
      代理商: FM4003-L
      Chip Silicon Rectifier
      FM4001-L THRU FM4007-L
      Glass passivated type
      Features
      Plastic package has Underwriters Laboratory
      Flammability Classification 94V-O Utilizing Flame
      Retardant Epoxy Molding Compound.
      For surface mounted applications.
      Exceeds environmental standards of ML-S-19500 /
      228
      Low leakage current.
      Mechanical data
      Case : Molded plastic, JEDECDO-214AC
      Terminals : Solder plated, solderable per MIL-STD-750,
      Method 2026
      Polarity : Indicated by cathode band
      Mounting Position : Any
      Weight : 0.0015 ounce, 0.05 gram
      (V)
      (V)
      (V)
      (V)
      (
      o
      C)
      FM4001
      A1
      50
      35
      50
      FM4002
      A2
      100
      70
      100
      FM4003
      A3
      200
      140
      200
      FM4004
      A4
      400
      280
      400
      FM4005
      A5
      600
      420
      600
      FM4006
      A6
      800
      560
      800
      FM4007
      A7
      1000
      700
      1000
      SYMBOLS
      MARKING
      CODE
      1.1
      -55 to +150
      Operating
      temperature
      V
      RRM
      *1
      V
      RMS
      *2
      V
      R
      *3
      V
      F
      *4
      MAXIMUM RATINGS
      (AT T
      A
      =25
      o
      C unless otherwise noted)
      PARAMETER
      CONDITIONS
      Symbol
      MIN.
      TYP.
      MAX.
      UNIT
      Forward rectified current
      See Fig.2
      I
      O
      1.0
      A
      Forward surge current
      8.3ms single half sine-wave superimposed on
      rate load (JEDEC methode)
      I
      FSM
      30
      A
      V
      R
      = V
      RRM
      T
      A
      = 25
      o
      C
      5.0
      uA
      V
      R
      = V
      RRM
      T
      A
      = 100
      o
      C
      50
      uA
      Thermal resistance
      Junction to ambient
      R
      q
      JA
      50
      o
      C / w
      Diode junction capacitance
      f=1MHz and applied 4vDC reverse voltage
      C
      J
      15
      pF
      Storage temperature
      T
      STG
      -55
      +150
      o
      C
      Reverse current
      I
      R
      *1 Repetitive peak reverse voltage
      *2 RMS voltage
      *3 Continuous reverse voltage
      *4 Maximum forward voltage
      Formosa MS
      0.205(5.2)
      0.189(4.8)
      0.012(0.3) Typ.
      0.110(2.8)
      0.094(2.4)
      0.181(4.6)
      0.165(4.2)
      0.075(1.9)
      0.067(1.7)
      0.040 (1.0) Typ.
      0.040(1.0) Typ.
      Dimensions in inches and (millimeters)
      SMA-L
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      參數(shù)描述
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