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參數(shù)資料
| 型號(hào)： | FM25CL04 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | DRAM |
| 英文描述： | 4Kb FRAM Serial 3V Memory |
| 中文描述： | 4Kb的鐵電串行3V的記憶 |
| 文件頁(yè)數(shù)： | 7/11頁(yè) |
| 文件大?。?/td> | 98K |
| 代理商： | FM25CL04 |
Table 4. Write Protection
WEL
0
1
1
Memory Operation
The SPI interface, which is capable of a relatively
high clock frequency, highlights the fast write
capability of the FRAM technology. Unlike SPI-bus
EEPROMs, the FM25CL04 can perform sequential
writes at bus speed. No page register is needed and
any number of sequential writes may be performed.
FM25CL04
Rev. 1.0
July 2003
Page 7 of 11
/WP
X
0
1
Protected Blocks
Protected
Protected
Protected
Unprotected Blocks
Protected
Protected
Unprotected
Status Register
Protected
Protected
Unprotected
Write Operation
All writes to the memory array begin with a WREN
op-code. The next op-code is the WRITE instruction.
This op-code must include the address MSB. It is
followed by a single byte address value. In total, the
9-bits specify the address of the first byte of the write
operation. Subsequent bytes are data and they are
written sequentially. Addresses are incremented
internally as long as the bus master continues to issue
clocks. If the last address of 1FFh is reached, the
counter will roll over to 000h. Data is written MSB
first. A write operation is shown in Figure 9.
Unlike EEPROMs, any number of bytes can be
written sequentially and each byte is written to
memory immediately after it is clocked in (after the
8
th
clock). The rising edge of /CS terminates a
WRITE op-code operation. Asserting /WP active in
the middle of a write operation will have no affect
until the byte being written has completed.
Read Operation
After the falling edge of /CS, the bus master can issue
a READ op-code. This op-code must include the
address MSB. It is followed by a single byte address
value. In total, the 9-bits specify the address of the
first byte of the read operation. After the op-code and
address are complete, the SI line is ignored. The bus
master issues 8 clocks, with one bit read out for each.
Addresses are incremented internally as long as the
bus master continues to issue clocks. If the last
address of 1FFh is reached, the counter will roll over
to 000h. Data is read MSB first. The rising edge of
/CS terminates a READ op-code operation. A read
operation is shown in Figure 10.
Hold
The /HOLD pin can be used to interrupt a serial
operation without aborting it. If the bus master pulls
the /HOLD pin low while SCK is low, the current
operation will pause. Taking the /HOLD pin high
while SCK is low will resume an operation. The
transitions of /HOLD must occur while SCK is low,
but the SCK and /CS pins can toggle during a hold
state.
CS
SCK
SI
SO
0
1
2
3
4
5
6
7
0
0
Hi-Z
1
MSB
LSB
0
1
2
3
4
6
7
A7
0
Op-code
8-bit Address
0
A0
A3
A4
A5
A6
0
1
2
3
4
5
6
7
7
Data In
0
1
2
3
4
5
6
MSB
LSB
7
0
0
0
A8
A1
A2
5
Figure 9. Memory Write
CS
SCK
SI
SO
0
1
2
3
4
5
6
7
0
0
Hi-Z
1
0
Op-code
0
1
2
3
4
5
6
7
7
Data Out
4
0
1
2
3
5
6
MSB
LSB
7
0
1
0
0
A8
MSB
LSB
0
1
2
3
4
6
7
A7
8-bit Address
A0
A3
A4
A5
A6
A1
A2
5
Figure 10. Memory Read
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PDF描述 |
|---|---|
| FM25CL04-S | 4Kb FRAM Serial 3V Memory |
| FM25CL64 | 4Kb FRAM Serial 3V Memory |
| FM25CL64-S | 4Kb FRAM Serial 3V Memory |
| FM25L04 | 4Kb FRAM Serial 3V Memory |
| FM25L04-G | 4Kb FRAM Serial 3V Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM25CL04_05 | 制造商:RAMTRON 制造商全稱:RAMTRON 功能描述:4Kb FRAM Serial 3V Memory |
| FM25CL04-G | 制造商:RAMTRON 制造商全稱:RAMTRON 功能描述:4Kb FRAM Serial 3V Memory |
| FM25CL04-S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4Kb FRAM Serial 3V Memory |
| FM25CL64 | 制造商:RAMTRON 制造商全稱:RAMTRON 功能描述:64Kb FRAM Serial 3V Memory |
| FM25CL64_07 | 制造商:RAMTRON 制造商全稱:RAMTRON 功能描述:64Kb FRAM Serial 3V Memory |
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