參數(shù)資料
型號(hào)： FM25640-S
廠商： Electronic Theatre Controls, Inc.
英文描述： LOW PROFILE .025 SQ STRIPS
中文描述： 64Kb的FRAM的串行存儲(chǔ)器
文件頁(yè)數(shù)： 9/14頁(yè)
文件大?。?/td> 131K
代理商： FM25640-S
FM25640
Rev. 2.1
Aug 2003
9 of 14
Applications
The versatility of FRAM technology fits into many
diverse applications. Clearly the strength of higher
write endurance and faster writes make FRAM
superior
to
EEPROM
programmable applications. The advantage is most
obvious in data collection environments where writes
are frequent and data must be nonvolatile.
The attributes of fast writes and high write endurance
combine in many innovative ways. A short list of
ideas is provided here.
1.
Data collection. In applications where data is
collected and saved, FRAM provides a superior
alternative to other solutions. It is more cost effective
than battery backup for SRAM and provides better
write attributes than EEPROM.
2.
Configuration. Any nonvolatile memory can
retain a configuration. However, if the configuration
changes and power failure is a possibility, the higher
write endurance of FRAM allows changes to be
recorded without restriction. Any time the system-
state is altered, the change can be written. This avoids
writing to memory on power-down when the
available time is short and power scarce.
3.
High noise environments. Writing to EEPROM
in a noisy environment can be challenging. When
severe noise or power fluctuations are present, the
long write time of EEPROM creates a window of
vulnerability during which the write can be
corrupted. The fast write of FRAM is complete
within a microsecond. This time is typically too short
for noise or power fluctuations to disturb it.
in
all
but
one-time
4.
Time to market. In a complex system, multiple
software routines may need to access the nonvolatile
memory. In this environment the time delay
associated with programming EEPROM adds undue
complexity to the software development. Each
software
routine
must
programming before allowing access to the next
routine. When time to market is critical, FRAM can
eliminate this simple obstacle. As soon as a write is
issued to the FM25640, it is effectively done -- no
waiting.
5.
RF/ID. In the area of contactless memory,
FRAM provides an ideal solution. Since RF/ID
memory is powered by an RF field, the long
programming time and high current consumption
needed to write EEPROM is unattractive. FRAM
provides a superior solution. The FM25640 is
suitable for multi-chip RF/ID products.
6.
Maintenance tracking. In sophisticated systems,
the operating history and system-state during a failure
is important knowledge. Maintenance can be
expedited when this information has been recorded.
Due to the high write endurance, FRAM makes an
ideal system log. In addition, the convenient interface
of the FM25640 allows memory to be distributed
throughout the system using minimal additional
resources.
wait
for
complete
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FM25640-STR 功能描述:F-RAM 64K (8Kx8) 5V RoHS:否 存儲(chǔ)容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor
FM25C020 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:2K-Bit SPI⑩ Interface Serial CMOS EEPROM
FM25C020U 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:2K-Bit SPI⑩ Interface Serial CMOS EEPROM
FM25C020UE 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:2K-Bit SPI⑩ Interface Serial CMOS EEPROM
FM25C020UEM8 功能描述:電可擦除可編程只讀存儲(chǔ)器 SOIC-8 RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
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