參數資料
型號: FM25256-G
廠商: Electronic Theatre Controls, Inc.
英文描述: 256Kb FRAM Serial 5V Memory
中文描述: 的256Kb FRAM的串行5V的記憶
文件頁數: 7/13頁
文件大?。?/td> 120K
代理商: FM25256-G
by terminating a write cycle (/CS high) or by using
the WRDI command.
BP1 and BP0 are memory block write protection bits.
They specify portions of memory that are write
protected as shown in the following table.
Table 3. Block Memory Write Protection
BP1
BP0
Protected Address Range
0
0
None
0
1
6000h to 7FFFh (upper )
1
0
4000h to 7FFFh (upper )
1
1
0000h to 7FFFh (all)
The BP1 and BP0 bits and the Write Enable Latch
are the only mechanisms that protect the memory
from writes. The remaining write protection features
protect inadvertent changes to the block protect bits.
Table 4. Write Protection
WEL
WPEN
0
X
1
0
1
1
1
1
Memory Operation
The SPI interface, which is capable of a relatively
high clock frequency, highlights the fast write
capability of the FRAM technology. Unlike SPI-bus
EEPROMs, the FM25256 can perform sequential
writes at bus speed. No page register is needed and
any number of sequential writes may be performed.
FM25256
Rev. 2.0
Apr. 2005
Page 7 of 13
The WPEN bit controls the effect of the hardware
/WP pin. When WPEN is low, the /WP pin is
ignored. When WPEN is high, the /WP pin controls
write access to the status register. Thus the Status
register is write protected if WPEN=1 and /WP=0.
This scheme provides a write protection mechanism,
which can prevent software from writing the
memory under any circumstances. This occurs if the
BP1 and BP0 are set to 1, the WPEN bit is set to 1,
and /WP is set to 0. This occurs because the block
protect bits prevent writing memory and the /WP
signal in hardware prevents altering the block
protect bits (if WPEN is high). Therefore in this
condition, hardware must be involved in allowing a
write operation. The following table summarizes the
write protection conditions.
/WP
X
X
0
1
Protected Blocks
Protected
Protected
Protected
Protected
Unprotected Blocks
Protected
Unprotected
Unprotected
Unprotected
Status Register
Protected
Unprotected
Protected
Unprotected
Write Operation
All writes to the memory array begin with a WREN
op-code. The next op-code is the WRITE instruction.
This op-code is followed by a two-byte address
value. The upper bit of the address is a “don’t care”.
In total, 15-bits specify the address of the first data
byte of the write operation. Subsequent bytes are data
and they are written sequentially. Addresses are
incremented internally as long as the bus master
continues to issue clocks. If the last address of 7FFFh
is reached, the counter will roll over to 0000h. Data is
written MSB first. A write operation is shown in
Figure 9.
Unlike EEPROMs, any number of bytes can be
written sequentially and each byte is written to
memory immediately after it is clocked in (after the
8
th
clock). The rising edge of /CS terminates a
WRITE op-code operation. Asserting /WP active in
the middle of a write operation will have no effect
until the next falling edge of /CS.
Read Operation
After the falling edge of /CS, the bus master can issue
a READ op-code. Following this instruction is a two-
byte address value. The upper bit of the address is a
don’t care. In total, 15-bits specify the address of the
first byte of the read operation. After the op-code and
address are complete, the SI line is ignored. The bus
master issues 8 clocks, with one bit read out for each.
Addresses are incremented internally as long as the
bus master continues to issue clocks. If the last
address of 7FFFh is reached, the counter will roll
over to 0000h. Data is read MSB first. The rising
edge of /CS terminates a READ op-code operation.
A read operation is shown in Figure 10.
Hold
The /HOLD pin can be used to interrupt a serial
operation without aborting it. If the bus master pulls
the /HOLD pin low while SCK is low, the current
operation will pause. Taking the /HOLD pin high
while SCK is low will resume an operation. The
transitions of /HOLD must occur while SCK is low,
but the SCK and /CS pins can toggle during a hold
state.
相關PDF資料
PDF描述
FM25256-S 256Kb FRAM Serial 5V Memory
FM25640 TERM STRIP, TH, LO PRO
FM25640-S LOW PROFILE .025 SQ STRIPS
FM25CL04 4Kb FRAM Serial 3V Memory
FM25CL04-S 4Kb FRAM Serial 3V Memory
相關代理商/技術參數
參數描述
FM25256-GTR 功能描述:F-RAM 256K (32Kx8) 5V RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor
FM25256-S 功能描述:F-RAM 256K (32Kx8) 5V RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor
FM25256-STR 功能描述:F-RAM 256K (32Kx8) 5V RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor
FM-253 制造商:WALDOM ELECTRONICS 功能描述:
FM-253-0015P 制造商:WALDOM ELECTRONICS 功能描述: