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參數(shù)資料
| 型號(hào)： | FM18L08-70-S |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 4Kb FRAM Serial 3V Memory |
| 中文描述： | 4Kb的鐵電串行3V的記憶 |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大?。?/td> | 80K |
| 代理商： | FM18L08-70-S |
Preliminary
FM18L08
256Kb 2.7-3.6V Bytewide FRAM Memory
This data sheet contains specifications for a product under development.
Characterization is not complete; specifications may change without notice.
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000, Fax (719) 481-7058
www.ramtron.com
23 March 2001
1/11
Features
256K bit Ferroelectric Nonvolatile RAM
Organized as 32,768 x 8 bits
10 year data retention at 85
°
C
Unlimited read/write cycles
NoDelay write
Advanced high-reliability ferroelectric process
Superior to Battery-backed SRAM
No battery concerns
Monolithic reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
Resistant to negative voltage undershoots
SRAM & EEPROM Compatible
JEDEC 32Kx8 SRAM & EEPROM pinout
70 ns access time
130 ns cycle time
Equal access & cycle time for reads and writes
Low Power Operation
2.7V to 3.6V operation
15 mA active current
15
μ
A standby current
Industry Standard Configuration
Industrial temperature -40
°
C to +85
°
C
28-pin SOP or DIP
Description
The FM18L08 is a 256-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile but operates in other respects as a RAM.
It provides data retention for 10 years while
eliminating the reliability concerns, functional
disadvantages and system design complexities of
battery-backed SRAM. Fast-write time and practically
unlimited read/write endurance make it superior to
other types of nonvolatile memory and a good
substitute for ordinary SRAM.
In-system operation of the FM18L08 is very similar to
other RAM based devices. Memory read- and write-
cycles require equal times. The FRAM memory,
however, is nonvolatile due to its unique ferroelectric
memory process. Unlike BBSRAM, the FM18L08 is a
truly monolithic nonvolatile memory. It provides the
same functional benefits of a fast write without the
serious disadvantages associated with modules and
batteries or hybrid memory solutions.
These capabilities make the FM18L08 ideal for
nonvolatile memory applications requiring frequent or
rapid writes in a bytewide environment. The
availability of a true surface-mount package improves
the manufacturability of new designs, while the DIP
package facilitates simple design retrofits. The
FM18L08 offers guaranteed operation over an
industrial temperature range of -40°C to +85°C.
Pin Configuration
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
DQ3
DQ4
DQ5
DQ6
DQ7
CE
A10
OE
A11
A9
A8
A13
WE
VDD
Ordering Information
70 ns access, 28-pin SOP
70 ns access, 28-pin DIP
FM18L08-70-S
FM18L08-70-P
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM18L08-70-SG | 功能描述:F-RAM 256K (32Kx8) 70ns 3V RoHS:否 存儲(chǔ)容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM18L08-70-SG | 制造商:Ramtron International Corporation 功能描述:Nonvolatile SRAM Memory IC Memory Type:F |
| FM18L08-70-SGTR | 功能描述:F-RAM 256K (32Kx8) 70ns 3V RoHS:否 存儲(chǔ)容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM18L08-70-STR | 功能描述:F-RAM 256K (32Kx8) 70ns 3V RoHS:否 存儲(chǔ)容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM18L08-70-TG | 功能描述:F-RAM 256K (32Kx8) 70ns 3V RoHS:否 存儲(chǔ)容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
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