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參數(shù)資料
| 型號(hào)： | FLM8596-12F |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | X, Ku-Band Internally Matched FET |
| 中文描述： | 十，Ku波段內(nèi)部匹配場效應(yīng)管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 258K |
| 代理商： | FLM8596-12F |
FEATURES
High Output Power: P1dB= 40.5dBm (Typ.)
High Gain: G1dB= 7.5dB (Typ.)
High PAE:
η
add= 25% (Typ.)
Low IM3= -45dBc@Po = 29.5dBm
Broad Band: 8.5 ~ 9.6GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed
DESCRIPTION
The FLM8596-12F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna
’
s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
1
Edition 1.1
August 2004
FLM8596-12F
X, Ku-Band Internally Matched FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
57.6
-65 to +175
175
Tc = 25
°
C
V
V
W
°
C
°
C
PT
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°
C)
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -5.6 mA respectively with
gate resistance of 50
.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Power-added Efficiency
3rd Order Intermodulation
Distortion
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS
gm
-
6000
9000
-
5000
-
-0.5
-1.5
-3.0
-5
-
-
6.5
7.5
-
-
25
-
39.5
40.5
-
VDS = 5V, IDS = 300mA
IGS = -340
μ
A
VDS = 5V, IDS = 3600mA
VDS = 5V, VGS = 0V
VDS =10V,
IDS = 0.65 IDSS (Typ.),
f = 8.5 ~ 9.6 GHz,
ZS=ZL= 50 ohm
f = 9.6 GHz,
f = 10 MHz
2-Tone Test
Pout = 29.5dBm S.C.L.
mA
mS
V
dB
%
-42
-45
-
dBc
dBm
V
Vp
VGSO
P1dB
G1dB
Idsr
η
add
Drain Current
-
3600
4500
mA
IM3
Gain Flatness
-
-
±
0.6
dB
G
Test Conditions
Unit
Limit
Typ.
Max.
Min.
Channel to Case
Thermal Resistance
-
2.3
2.6
°
C/W
Rth
Tch
10V x Idsr x Rth
Channel Temperature Rise
-
-
80
°
C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
CASE STYLE:
IB
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