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參數(shù)資料
| 型號： | FLM5359-8F |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | C-Band Internally Matched FET |
| 中文描述： | C波段內(nèi)部匹配場效應(yīng)管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 254K |
| 代理商： | FLM5359-8F |
2
FLM5359-8F
C-Band Internally Matched FET
POWER DERATING CURVE
20
40
50
30
10
0
50
Case Temperature (
°
C)
100
150
200
T
OUTPUT POWER & IM3 vs. INPUT POWER
VDS=10V
f1 = 5.9 GHz
f2 = 5.91 GHz
2-tone test
16
18
20
22
24
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
28
30
32
34
26
24
-50
-40
-30
-20
O
IM3
Pout
I
OUTPUT POWER vs. FREQUENCY
Pin=33.5dBm
23.5dBm
27.5dBm
19.5dBm
5.5
5.3
5.7
5.9
Frequency (GHz)
42
38
40
36
34
32
30
O
VDS=10V
P1dB
OUTPUT POWER vs. INPUT POWER
VDS=10V
f = 5.6 GHz
23
19
21
25
27
29
31
33
Input Power (dBm)
36
38
40
34
32
30
30
45
15
O
η
add
Pout
η
a
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PDF描述 |
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| FLM5972-12F | C-Band Internally Matched FET |
| FLM5972-4F | C-Band Internally Matched FET |
| FLM5972-8F | C-Band Internally Matched FET |
| FLM6472-18F | C-Band Internally Matched FET |
| FLM6472-25F | C-Band Internally Matched FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FLM56/10 | 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:Axial Lead and Cartridge Fuses - Midget |
| FLM5964-12F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, C-Band, 10dB, 5.9 6.4GHz, 3250mA, Bulk |
| FLM5964-12F/001 | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, C-Band, 9dB, 5.85 6.75GHz, 3250mA, Bulk |
| FLM5964-18F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:C-Band Internally Matched FET |
| FLM5964-25F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, C-Band, 10dB, 5.9 6.4GHz, 6500mA, Bulk |
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