參數(shù)資料
型號(hào): FLM3439-4F
廠商: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
英文描述: C-Band Internally Matched FET
中文描述: C波段內(nèi)部匹配場(chǎng)效應(yīng)管
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 273K
代理商: FLM3439-4F
2
FLM3439-4F
C-Band Internally Matched FET
OUTPUT POWER & IM3 vs. INPUT POWER
VDS=10V
f1 = 3.9 GHz
f2 = 3.91 GHz
2-tone test
12
14
16
18
20
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
29
31
33
27
25
23
-50
-40
-30
-20
O
IM3
Pout
I
POWER DERATING CURVE
12
6
24
30
18
0
50
Case Temperature (
°
C)
100
150
200
T
OUTPUT POWER vs. FREQUENCY
3.4
3.65
3.9
Frequency (GHz)
36
38
37
35
33
34
32
O
VDS=10V
P1dB
OUTPUT POWER vs. INPUT POWER
VDS = 10V
f = 3.65 GHz
14
16
18
20
22
24
26
Input Power (dBm)
36
38
34
32
30
28
30
45
15
O
η
add
Pout
η
a
Pin=25dBm
23dBm
21dBm
19dBm
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FLM3439-8F 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:C-Band Internally Matched FET
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