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參數(shù)資料
| 型號(hào)： | FLM1314-3F |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | X, Ku-Band Internally Matched FET |
| 中文描述： | 十，Ku波段內(nèi)部匹配場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 306K |
| 代理商： | FLM1314-3F |
2
FLM1314-3F
X, Ku-Band Internally Matched FET
POWER DERATING CURVE
50
0
100
150
200
Case Temperature (
°
C)
24
30
18
12
6
T
OUTPUT POWER & IM3 vs. INPUT POWER
VDS=10V
f1 = 14.5 GHz
f2 = 14.51 GHz
2-tone test
15
19
17
23
21
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
O
-25
-15
-35
-45
-55
24
22
20
26
28
30
18
I
IM3
Pout
13.9
13.7
14.1
14.3
14.5
32
31
33
34
35
36
Frequency (GHz)
O
OUTPUT POWER vs. FREQUENCY
VDS = 10V
P1dB
Pin = 31dBm
29dBm
27dBm
25dBm
20
18
22
24
26
28
30
32
28
24
26
30
32
34
36
30
10
20
Input Power (dBm)
O
η
a
η
add
Pout
OUTPUT POWER vs. INPUT POWER
VDS = 10V
f = 14.25 GHz
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| FLM1314-6F | X, Ku-Band Internally Matched FET |
| FLM1414-12F | X, Ku-Band Internally Matched FET |
| FLM1414-15F | X,Ku-Band Internally Matched FET |
| FLM3135-18F | C-Band Internally Matched FET |
| FLM3439-18F | C-Band Internally Matched FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FLM1314-6F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 5.5dB, 13.75 14.5GHz, 1650mA, Bulk |
| FLM1314-8F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6dB, 13.75 14.5GHz, 2400mA, Bulk |
| FLM14/10 | 制造商:LITTELFUSE 制造商全稱(chēng):Littelfuse 功能描述:Axial Lead and Cartridge Fuses - Midget |
| FLM1414-12F | 制造商:EUDYNA 制造商全稱(chēng):Eudyna Devices Inc 功能描述:X, Ku-Band Internally Matched FET |
| FLM1414-15F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6dB, 14.0 14.5GHz, 4200mA, Bulk |
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