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參數(shù)資料
| 型號： | FLM1213-8F |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | X, Ku-Band Internally Matched FET |
| 中文描述： | 十，Ku波段內(nèi)部匹配場效應(yīng)管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 296K |
| 代理商： | FLM1213-8F |
1
Edition 1.4
August 2004
FLM1213-8F
X, Ku-Band Internally Matched FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
42.8
-65 to +175
175
Tc = 25°C
V
W
°C
PT
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with
gate resistance of 100
.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS
-
3400
5200
-0.5
-1.5
-3.0
38.5
39.0
-
5.5
6.5
-
VDS = 5V, IDS =170mA
VDS = 5V, IDS = 2200mA
VDS = 5V, VGS = 0V
IGS = -170A
VDS = 10V
f = 12.7 ~ 13.2 GHz
IDS = 0.65 IDSS(Typ.)
ZS = ZL = 50
mA
V
-
3400
-
mS
-5.0
-
V
dB
dBm
gm
Vp
VGSO
P1dB
G1dB
Drain Current
-
2200
2600
mA
Idsr
Power-Added Efficiency
-28
-
%
ηadd
Gain Flatness
--
±0.6
dB
G
Thermal Resistance
Channel to Case
-
3.0
3.5
°C/W
Rth
3rd Order Intermodulation
Distortion
f = 13.2GHz,
f = 10MHz
2-Tone Test
Pout = 28.5dBm S.C.L.
-44
-46
-
dBc
IM3
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°C)
CASE STYLE: IA
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
10V x Idsr x Rth
Channel Temperature Rise
--
80
°C
Tch
FEATURES
High Output Power: P1dB = 39.0dBm (Typ.)
High Gain: G1dB = 6.5dB (Typ.)
High PAE:
ηadd = 28% (Typ.)
Low IM3 = -46dBc@Po = 28.5dBm
Broad Band: 12.7 ~ 13.2GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed
DESCRIPTION
The FLM1213-8F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain
in a 50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
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PDF描述 |
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| FLM1314-18F | X,Ku-Band Internally Matched FET |
| FLM1314-8F | X, Ku-Band Internally Matched FET |
| FLM1414-4F | Internally Matched Power GaAs FET |
| FLM1414-8F | Internally Matched Power GaAs FET |
| FLM1415-6F | Internally Matched Power GaAs FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FLM1314-12F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:X, Ku-Band Internally Matched FET |
| FLM1314-18F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6dB, 13.75 14.5GHz, 5000mA, Bulk |
| FLM1314-3F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:X, Ku-Band Internally Matched FET |
| FLM1314-6F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 5.5dB, 13.75 14.5GHz, 1650mA, Bulk |
| FLM1314-8F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6dB, 13.75 14.5GHz, 2400mA, Bulk |
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