參數(shù)資料
型號: FLM0910-4F
廠商: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
英文描述: X, Ku-Band Internally Matched FET
中文描述: 十,Ku波段內(nèi)部匹配場效應(yīng)管
文件頁數(shù): 2/4頁
文件大?。?/td> 308K
代理商: FLM0910-4F
2
FLM0910-4F
X, Ku-Band Internally Matched FET
POWER DERATING CURVE
50
0
100
150
200
Case Temperature (
°
C)
24
30
18
12
6
T
OUTPUT POWER & IM3 vs. INPUT POWER
VDS=10V
f1 = 10.5 GHz
f2 = 10.51 GHz
2-tone test
16
18
20
22
24
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
24
26
28
30
32
22
20
-55
-45
-35
-25
-15
O
IM3
Pout
I
OUTPUT POWER vs. FREQUENCY
9.5
Pin=29dBm
26dBm
27dBm
25dBm
23dBm
10.5
10.0
Frequency (GHz)
31
32
33
34
35
36
37
O
VDS=10V
P1dB
OUTPUT POWER vs. INPUT POWER
VDS=10V
f = 10.0 GHz
23
19
21
25
27
29
Input Power (dBm)
30
32
34
36
28
26
20
30
40
10
O
η
add
Pout
η
a
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