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參數(shù)資料
| 型號： | FLL600IQ-2 |
| 廠商： | FUJITSU LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Push-Pull Configuration, Broad Frequency Range: 800 to 2000 MHz, Suitable for class AB operation |
| 中文描述： | L BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | CASE IQ, 5 PIN |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 100K |
| 代理商： | FLL600IQ-2 |
4
FLL600IQ-2
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
1997 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0597M200
Case Style "IQ"
Metal-Ceramic Hermetic Package
Unit: mm (inches)
8
(
1
(
2
(
2
(
1
(
4-R1.3
(0.051)
16.4
(0.646)
±
0.2
±
0.15
6.0
(0.236)
±
0.2
20.4
(0.803)
±
0.2
24.0
(0.945)
±
0.2
±
0
±
0
±
0.13
2.4
(0.094)
5.5 Max.
(0.217)
0.1
(0.004)
2.0
(0.079)
1
2
5
4
3
1, 2: Gate
3: Source
4, 5: Drain
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FLL600IQ-3 | L-Band Medium & High Power GaAs FET |
| FLL810IQ-3C | L-Band High Power GaAs FET |
| FLL810IQ-4C | L-Band High Power GaAs FET |
| FLLD261 | HIGH CONDUCTANCE LOW LEAKAGE DIODE |
| FLLD261 | SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FLL600IQ-2C | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:L-Band High Power GaAs FET |
| FLL600IQ-3 | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:L-Band Power GaAs FET (48.0dBm@2.76GHz), Bulk |
| FLL800IQ-2C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:L-Band High Power GaAs FET |
| FLL810IQ-3C | 制造商:FUJITSU 功能描述: |
| FLL810IQ-4C | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:L-Band High Power GaAs FET |
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