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參數(shù)資料
| 型號： | FLL120MK |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | L-Band Medium & High Power GaAs FET |
| 中文描述： | L波段中等 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 96K |
| 代理商： | FLL120MK |
3
FLL120MK
L-Band Medium & High Power GaAs FET
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
S11
S22
180
°
+90
°
0
°
-90
°
S21
S12
SCALE FOR |S21|
S
0.2
0.1
1
4.5
4.5
1.5
3.0
4.0
0.5GHz
4.0
1
5.0 GHz
5.0 GHz
0.5 GHz
5.0 GHz
5.0 GHz
2
3
4
4.5
4.5
4.0
4.0
3.0
2.5
2.0
0.5GHz
3.0
3.5
3.5
1.0
0.5GHz
250
100
10
25
50
2.0
S-PARAMETERS
VDS= 10V, IDS= 2200mA
S21
MAG
ANG
FREQUENCY
(MHZ)
S11
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
500
.959
-168.4
3.136
95.8
.008
31.0
.824
179.4
1000
.953
-176.0
1.617
94.1
.010
45.7
.813
178.8
1500
.953
-179.6
1.170
93.8
.011
64.3
.810
177.7
2000
.951
177.0
.978
92.3
.014
82.4
.792
176.5
2500
.939
172.6
.927
91.4
.021
89.1
.778
174.0
3000
.914
165.1
.936
88.0
.024
93.2
.739
168.3
3500
.885
152.7
.990
80.6
.033
94.6
.695
158.9
4000
.836
134.0
1.106
67.1
.051
88.1
.633
145.1
4500
.766
107.3
1.239
48.2
.067
77.3
.559
128.0
5000
.690
71.6
1.415
23.9
.103
60.5
.477
107.3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FLL200IB-1 | L-Band Medium & High Power GaAs FET |
| FLL200IB-2 | L-Band Medium & High Power GaAs FET |
| FLL200IB-3 | L-Band Medium & High Power GaAs FET |
| FLL21E004ME | High Voltage - High Power GaAs FET |
| FLL21E010MK | High Voltage - High Power GaAs FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FLL1500IU-2C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:L-Band High Power GaAs FET |
| FLL177 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:L-BAND MEDIUM & HIGH POWER GAAS FET |
| FLL177ME | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:L-BAND MEDIUM & HIGH POWER GAAS FET |
| FLL200IB-1 | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:L-Band Medium & High Power GaAs FET |
| FLL200IB-2 | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:L-Band Medium & High Power GaAs FET |
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