參數(shù)資料
型號: FLA Series
英文描述: Flash Memory Card 1 MB Through 40 MB (Intel/Sharp Based)(1M字節(jié)-40M字節(jié)閃速存儲器卡(基于Intel/Sharp))
中文描述: 閃存卡1到40 MB的字節(jié)(英特爾/夏普為基礎)(100萬字節(jié),4000萬字節(jié)閃速存儲器卡(基于英特爾/夏普))
文件頁數(shù): 3/15頁
文件大?。?/td> 140K
代理商: FLA SERIES
August 2000 Rev. 4 - ECO #13125
3
PCMCIA Flash Memory Card
FLA Series
PC Card Products
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
Signal name
GND
DQ3
DQ4
DQ5
DQ6
DQ7
CE1#
A10
OE#
A11
A9
A8
A13
A14
WE#
RDY/BSY
#
Vcc
Vpp1
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
WP
GND
I/O
Function
Ground
Data bit 3
Data bit 4
Data bit 5
Data bit 6
Data bit 7
Card enable 1
Address bit 10
Output enable
Address bit 11
Address bit 9
Address bit 8
Address bit 13
Address bit 14
Write Enable
Ready/Busy
Supply Voltage
Prog. Voltage
Address bit 16
Address bit 15
Address bit 12
Address bit 7
Address bit 6
Address bit 5
Address bit 4
Address bit 3
Address bit 2
Address bit 1
Address bit 0
Data bit 0
Data bit 1
Data bit 2
Write Potect
Ground
Active
Pin
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
Signal name
GND
CD1#
DQ11
DQ12
DQ13
DQ14
DQ15
CE2#
VS1
RFU
RFU
A17
A18
A19
A20
A21
Vcc
Vpp2
A22
A23
A24
A25
VS2
RST
Wait#
RFU
REG#
BVD2
BVD1
DQ8
DQ9
DQ10
CD2#
GND
I/O
Function
Ground
Card Detect 1
Data bit 11
Data bit 12
Data bit 13
Data bit 14
Data bit 15
Card Enable 2
Voltage Sense 1
Reserved
Reserved
Address bit 17
Address bit 18
Address bit 19
Address bit 20
Address bit 21
Supply Voltage
Prog. Voltage
Address bit 22
Address bit 23
Address bit 24
Address bit 25
Voltage Sense 2
Card Reset
Extended Bus cycle
Reserved
Attrib Mem Select
Bat. Volt. Detect 2
Bat. Volt. Detect 1
Data bit 8
Data bit 9
Data bit 10
Card Detect 2
Ground
Active
I/O
I/O
I/O
I/O
I/O
I
I
I
I
I
I
I
I
I
O
O
I/O
I/O
I/O
I/O
I
I
O
LOW
LOW
LOW
N.C.
LOW
I
I
I
I
I
LOW
LOW (4)
2MB(3)
4MB(3)
N.C.
N.C.
8MB(3)
16MB(3)
32MB(3)
64MB(3)
N.C.
HIGH (4)
Low(2,4)
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
O
I
O
I
O
O
I/O
I/O
O
O
(2)
(2)
I/O
I/O
I/O
O
HIGH
LOW
Pinout
Notes:
1. RDY/BSY signal is an “Open drain” type output, pull-up resistor on host side is required.
2. Wait#, BVD1 and BVD2 are driven high for compatibility.
3. Shows density for which specified address bit is MSB. Higher order address bits are no connects
(ie 4MB A21 is MSB A22 - A25 are NC).
4. NC - No Connection for FLA51 - FLA66.
Mechanical
54.0mm
±
0.10
(2.126”)
10.0mm MIN
(0.400”)
1.6mm
±
0.05
(0.063”)
1.0mm
±
0.05
(0.039”)
1.0mm
±
0.05
(0.039”)
3.3mm
±
T1 (0.130”)
T1=0.10mm interconnect area
T1=0.20mm substrate area
Interconnect area
10.0mm MIN
(0.400”)
3.0mm MIN
85.6mm
±
0.20
(3.370”)
Substrate area
相關PDF資料
PDF描述
FLASH LOW SIGNAL RELAY, 2 Amp, DPDT Relay, Rated Load: 2A @ 30VDC, Contact Form: DPDT (2 Form C), Nominal Power: 150mW / 360mW / 500mW, 1,500V (10x160us) surge withstand / 1,000VAC dielectric strength, 11.4 H x 9.9 W x 20.3 L mm (0.45 H x 0.39 W x 0.80 L in) Fully sealed construction, UL/CSA recognition, RoHS compliant
FLASHMEMORYPRODUCTSELECTORGUIDE --(35.00 k)
FLATRON15LCD575MS(LB575EE) Monitor_ICs:FB775B STR-F6654A[LF1351] LTV-817M
FLATRON995FT(FB995C-UA)19COLOR Monitor_ICs:RYC8240 M62501P
FLATRONL1810B(LB800H-UL)18LCD Monitor_ICs:BA033FP-E2 BA7657F CAT24WC08J-TE13 FDC6326L GM5020 KIA7042AF M12L16161A-7T RC1117S-2.5 S524A40X21(SCT0) THC63LVD823
相關代理商/技術參數(shù)
參數(shù)描述
FLASH 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash Memory Brochure
FLASH CARD-128 功能描述:存儲卡 128 MEG FLASH CARD RoHS:否 制造商:Olimex Ltd. 產(chǎn)品:SD 存儲容量: 連續(xù)讀取: 連續(xù)寫入: 有源模式電流: 工作電源電壓: 最大工作溫度: 尺寸:
FLASH CARD-512 功能描述:存儲卡 512 MB COMPACT FLASH CARD RoHS:否 制造商:Olimex Ltd. 產(chǎn)品:SD 存儲容量: 連續(xù)讀取: 連續(xù)寫入: 有源模式電流: 工作電源電壓: 最大工作溫度: 尺寸:
FLASH PRO 4 制造商:Microsemi Corporation 功能描述:
FLASH-150Z 制造商:Amprobe Test Tools 功能描述:FLASHLIGHT - 2 AA BATTERIES W/ ZOOM ;ROHS COMPLIANT: NA