參數(shù)資料
型號: FL14KM-9A
英文描述: FL14KM-9A Datasheet 88K/MAR.20.03
中文描述: FL14KM - 9A條數(shù)據(jù)88K/MAR.20.03
文件頁數(shù): 3/5頁
文件大小: 87K
代理商: FL14KM-9A
PRELIMINARY
Some parametric limits are subject to change.
Aug. 1999
MITSUBISHI POWER MOSFET
FL14KM-10A
HIGH-SPEED SWITCHING USE
Nch POWER MOSFET
I
D
= 1mA, V
GS
= 0V
I
GS
=
±
100
μ
A, V
DS
= 0V
V
GS
=
±
25V, V
DS
= 0V
V
DS
= 500V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 7A, V
GS
= 10V
I
D
= 7A, V
GS
= 10V
I
D
= 7A, V
DS
= 10V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
V
DD
= 200V, I
D
= 7A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 7A, V
GS
= 0V
Channel to case
V
V
μ
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
°
C/W
500
±
30
2.0
3.0
0.50
3.5
10.0
1500
180
60
30
60
250
115
1.5
±
10
1.0
4.0
0.64
4.5
2.0
3.13
0
10
20
30
40
50
0
200
50
100
150
0
10
20
30
40
50
0
10
20
30
40
50
P
D
= 40W
V
GS
= 20V
Tc = 25
°
C
Pulse Test
10V
4V
6V
5V
10
0
10
–1
3
2
5
7
10
1
2
3
5
7
2
3
5
7
10
0
2
10
1
3
5 7
2
10
2
3
5 7
10
3
5 7
2 3
tw = 10
μ
s
Tc = 25
°
C
Single Pulse
100
μ
s
10ms
1ms
DC
0
4
8
12
16
20
0
4
8
12
16
20
V
GS
= 20V
Tc = 25
°
C
Pulse Test
10V
6V
5V
4V
P
D
= 40W
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(
°
C)
P
D
D
D
D
D
Symbol
Parameter
Test conditions
Limits
Typ.
Min.
Max.
Unit
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ELECTRICAL CHARACTERISTICS
(Tch = 25
°
C)
PERFORMANCE CURVES
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