參數(shù)資料
型號(hào): FFM302
廠商: 美麗微半導(dǎo)體有限公司
英文描述: Fast recovery type
中文描述: 快速恢復(fù)類(lèi)型
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 24K
代理商: FFM302
RECTRON
RATING AND CHARACTERISTIC CURVES ( FFM301 THRU FFM307 )
J
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE, ( V )
200
100
60
40
20
10
6
4
2
1
.1
.2
.4
1.0
2
4
10
20
40
100
TJ = 25
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURVE
A
AMBIENT TEMPERATURE, ( )
5
4
3
2
1
0
0
25
50
75
100 125 150 175
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
I
INSTANTANEOUS FORWARD VOLTAGE, (V)
TJ = 25
¢J
Pulse Width=300uS
1% Duty Cycle
20
10
3.0
1.0
0.3
0.1
.03
.010.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
FIG. 5 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
D.U.T
25 Vdc
(approx)
( - )
( - )
( + )
( + )
1
NON-
INDUCTIVE
OS(NOTE 1)
GEPULSE
(NOTE 2)
NOTES:
1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
trr
+0.5A
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR
50/100 ns/cm
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
P
NUMBER OF CYCLES AT 60Hz
C
8.3ms Single Half Sine-Wave
200
100
50
30
20
10
1
5
10
50
100
相關(guān)PDF資料
PDF描述
FFM303 Fast recovery type
FG1600BX40 THYRISTOR|GTO|2KV V(DRM)|TO-200VAR75
FG1600BX50 THYRISTOR|GTO|2.5KV V(DRM)|TO-200VAR75
FG1800AH40 THYRISTOR|GTO|2KV V(DRM)|TO-200AF
FG1800AH50 THYRISTOR|GTO|2.5KV V(DRM)|TO-200AF
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