參數(shù)資料
型號: FFH30US30DN
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 參考電壓二極管
英文描述: 30A, 300V Stealth Diode
中文描述: 30 A, 300 V, SILICON, RECTIFIER DIODE, TO-247
封裝: TO-247, 3 PIN
文件頁數(shù): 2/6頁
文件大小: 152K
代理商: FFH30US30DN
2003 Fairchild Semiconductor Corporation
FFH30US30DN Rev. A1
F
Package Marking and Ordering Information
Electrical Characteristics (per leg)
T
C
= 25
°
C unless otherwise noted
Off State Characteristics
I
R
Instantaneous Reverse Current
On State Characteristics
V
F
Instantaneous Forward Voltage
Dynamic Characteristics
C
J
Junction Capacitance
Switching Characteristics
t
rr
Reverse Recovery Time
Thermal Characteristics
R
θ
JC
Thermal Resistance Junction to Case
R
θ
JA
Thermal Resistance Junction to Ambient TO-247
Device Marking
30US30DN
Device
Package
TO-247
Tape Width
N/A
Quantity
30
FFH30US30DN
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
V
R
= 300V
T
C
= 25
°
C
T
C
= 125
°
C
-
-
-
-
100
1
μA
mA
I
F
= 30A
T
C
= 25
°
C
T
C
= 125
°
C
-
-
0.93
0.8
1.0
0.87
V
V
V
R
= 10V, I
F
= 0A
-
410
-
pF
I
F
= 1A, dI
F
/dt = 100A/μs, V
R
= 15V
I
F
= 30A, dI
F
/dt = 100A/μs, V
R
= 15V
I
F
= 30A,
dI
F
/dt = 200A/μs,
V
R
= 195V, T
C
= 25
°
C
-
-
-
-
-
-
-
-
-
-
-
-
-
29
32
46
5.3
140
77
0.45
9
400
54
0.49
32
930
50
55
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
A
nC
ns
-
A
nC
ns
-
A
nC
t
rr
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (t
b
/t
a
)
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (t
b
/t
a
)
Maximum Reverse Recovery Current
Reverse Recovered Charge
I
RM(REC)
Q
RR
t
rr
S
I
RM(REC)
Q
RR
t
rr
S
I
RM(REC)
Q
RR
I
F
= 30A,
dI
F
/dt = 200A/μs,
V
R
=195V,
T
C
= 125
°
C
I
F
= 30A,
dI
F
/dt = 1000A/μs,
V
R
=195V,
T
C
= 125
°
C
TO-247
-
-
-
-
0.65
30
°
C/W
°
C/W
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