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參數(shù)資料
| 型號(hào)： | FFB3946 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN & PNP General Purpose Amplifier |
| 中文描述： | 200 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SC-70, 6 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大小： | 42K |
| 代理商： | FFB3946 |
Electrical Characteristics
T
A
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cutoff Current
I
EBO
Emitter Cutoff Current
ON CHARACTERISTICS
h
FE
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
V
CB
= 5.0 V, f = 100 kHz
V
CB
= 5.0 V, f = 100 kHz
200
MHz
C
obo
C
ibo
Output Capacitance
Input Capacitance
4.5
10
pF
pF
I
C
= 10 mA, I
B
= 0
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 30 V, I
E
= 0
V
EB
= 4.0 V, I
C
= 0
40
40
5.0
V
V
V
nA
nA
50
50
I
C
= 100
μ
A, V
CE
= 1.0 V
I
C
= 1.0 mA, V
CE
= 1.0 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 50 mA, V
CE
= 1.0 V
I
C
= 100mA, V
CE
= 1.0 V
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 10 mA, I
B
= 1.0 mA
40
70
100
60
30
300
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.25
0.9
V
V
NOTE:
All voltages (V) and currents (A) are negative polarity for PNP transistors.
F
NPN & PNP General Purpose Amplifier
(continued)
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