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參數(shù)資料
| 型號(hào)： | FE42-0001 |
| 英文描述： | GaAs Foundry Services PROCESS H12 |
| 中文描述： | 砷化鎵晶圓代工服務(wù)過程H12 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 34K |
| 代理商： | FE42-0001 |
Specifications Subject to Change Without Notice.
M/A-COM Inc.
North America: Tel. (800) 366-2266
Asia/Pacific: Tel. +81 3 3263-8761
Europe:
Fax (800) 618-8883 Fax +81 3 3263-8769
1
Tel. +44 (1344) 869-595
Fax +44 (1344) 300-020
GaAs Foundry Services
PROCESS HI2
HI2
V2.00
Features
0.5
μ
m MESFET Technology for High Gain/Low Noise
Applications
MMICs up to 20 GHz
100 mm wafer diameter
Layout and design assistance
Space qualification
Custom test and packaging
Description
M/A-COM’s HI2 process utilizes ion implanted MESFET
technology to achieve a high performing, low cost process for low
noise and medium power applications through 20 GHz. The focus is
on products for moderate to high volume applications. M/A-COM
offers a full compliment of foundry services to meet the
requirements for custom designing a MMIC-based die or packaged
product.
Typical RF Performance
KF44 (4X75) 300 um FET
Param.
Test Conditions
Freq.
Typ. Val.
MAG
V
DS
= 3V, I
DS
= .50I
DSS
12/18GHz
13/11.5dB
F
min
V
DS
= 3V, I
DS
= .25I
DSS
12/18GHz
1.3/1.9dB
G
a
Associated Gain at F
min
12/18GHz
7.5/6.0dB
ft
V
DS
= 3V, I
DS
= .50I
DSS
------
25GHz
Ordering Information
Part Number
FE42-0001
SVC6310
Description
HI2 Wafer
Mask Set
Electrical Specifications:
T
A
= +25
°
C
Parameter
200um PCM FET
IDSS
DC GM
Vp
BVgd
RF GM
Cgs
Cgd
Cds
Ft
Sheet Resistances
NDRS (N- GaAs)
NCRS (NiCr)
GFRS (Gate Metal)
MIM Capacitors
Capacitance/unit area
Capacitor Leakage
Test Conditions
Units
Min.
Typ.
Max.
VDS = 3V, VGS = 0V
VDS = 3V, IDS = 0.5IDSS
VDS = 3V, IDS = 0.025IDSS
IG = 0.1mA/mm
VDS = 3V, IDS = 0.5IDSS
VDS = 3V, IDS = 0.5IDSS
VDS = 3V, IDS = 0.5IDSS
VDS = 3V, IDS = 0.5IDSS
VDS = 3V, IDS = 0.5IDSS
mA/mm
mS/mm
V
V
mS
pF
pF
pF
GHz
140
150
-.8
-7
36
.18
.020
.034
23
185
190
-1.1
-10
44
.24
.028
.045
30
235
220
-1.5
-
52
.29
.033
.056
35
l = 20mA
l = 10mA
l = 20mA
Ohms/sq
Ohms/sq
Ohms/sq
470
42
-
540
50
.027
670
58
.040
f = 1MHz
V = 10V
pF/mm
2
μ
A
360
-
400
-
440
0.5
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