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參數(shù)資料
| 型號(hào)： | FDZ7064N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel Logic Level PowerTrench BGA MOSFET |
| 中文描述： | 13.5 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ULTRA THIN, BGA-30 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 186K |
| 代理商： | FDZ7064N |
May 2004
2004 Fairchild Semiconductor Corporation
FDZ7064N Rev.D4 (W)
FDZ7064N
30V N-Channel Logic Level PowerTrench BGA MOSFET
General Description
Combining Fairchild’s 30V PowerTrench process with
state of the art BGA packaging, the FDZ7064N
minimizes both PCB space and R
. This BGA
MOSFET embodies a breakthrough in packaging
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
charge, and low R
DS(ON)
.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
specifications resulting in DC/DC power supply
designs with higher overall efficiency.
Applications
DC/DC converters
Solenoid drive
Features
13.5 A, 30 V. R
DS(ON)
= 8.0 m
@ V
GS
= 4.5 V
R
DS(ON)
= 7.0 m
@ V
GS
= 10 V
Occupies only 14 mm
2
of PCB area. Only 42% of
the area of SO-8
Ultra-thin package: less than 0.8 mm height when
mounted to PCB
3.5 x 4 mm
2
Footprint
High power and current handling capability.
Pin 1
D
D
S
S
S
D
S
S
S
S
D
S
S
S
S
D
S
S
S
S
D
D
D
D
D
D
D
D
D
G
Bottom
Pin 1
F
Top
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
P
D
Power Dissipation (Steady State)
T
J
, T
stg
Operating and Storage Junction Temperature Range
Ratings
30
±
12
13.5
60
2.2
–55 to +150
Units
V
V
A
W
°
C
(Note 1a)
(Note 1a)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JB
Thermal Resistance, Junction-to-Ball
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
56
4.5
0.6
°
C/W
Package Marking and Ordering Information
Device Marking
Device
7064N
FDZ7064N
Reel Size
13”
Tape width
12mm
Quantity
3000
F
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| FDZ7064N_Q | 功能描述:MOSFET 30V N-Ch BGa MOSFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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