參數(shù)資料
型號： FDU3706
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 14.7 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
封裝： IPAK-3
文件頁數(shù)： 1/5頁
文件大?。?/td> 113K
代理商： FDU3706
April 2002
2002 Fairchild Semiconductor Corp.
FDD3706/FDU3706 Rev C (W)
FDD3706/FDU3706
20V N-Channel PowerTrench
MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS( ON)
, fast switching speed and
extremely low R
DS(ON)
in a small package.
N-Channel
MOSFET
has
been
designed
Applications
DC/DC converter
Motor Drives
Features
50 A, 20 V
R
DS(ON)
= 9 m
@ V
GS
= 10 V
R
DS(ON)
= 11 m
@ V
GS
= 4.5 V
R
DS(ON)
= 16 m
@ V
GS
= 2.5 V
Low gate charge (16 nC)
Fast Switching
High performance trench technology for extremely
low R
DS(ON)
G
D-PAK
(TO-252)
G D S
I-PAK
(TO-251AA)
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Continuous Drain Current @T
C
=25°C
Power Dissipation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
20
±
12
50
14.7
60
44
3.8
1.6
-55 to +175
Units
V
V
A
W
(Note 3)
@T
A
=25°C
Pulsed
@T
C
=25°C
@T
A
=25°C
@T
A
=25°C
(Note 1a)
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
P
D
°
C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
FDD3706
FDD3706
FDU3706
FDU3706
(Note 1)
3.4
45
96
°
C/W
°
C/W
°
C/W
(Note 1a)
(Note 1b)
Package
D-PAK (TO-252)
I-PAK (TO-251)
Reel Size
13’’
Tube
Tape width
12mm
N/A
Quantity
2500 units
75
F
相關PDF資料
PDF描述
FDD3706 30V N-Channel PowerTrench MOSFET
FDU6030BL 30V N-Channel PowerTrench MOSFET
FDD6030BL 30V N-Channel PowerTrench MOSFET
FDD6030 N-Channel PowerTrenchTM MOSFET
FDD6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor
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