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參數(shù)資料
| 型號： | FDS6890A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET |
| 中文描述： | 7.5 A, 20 V, 0.034 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOIC-8 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 241K |
| 代理商： | FDS6890A |
F
FDS6890A Rev. C
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
a) 78
°
C/W when
mounted on a 0.5 in
2
pad of 2 oz. copper.
b) 125
°
C/W when
mounted on a 0.02 in
2
pad of 2 oz. copper.
c) 135
°
C/W when
mounted on a minimum pad.
Electrical Characteristics
T
A
= 25 C unless otherwise noted
Symbol
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate-Body Leakage Current,
Forward
I
GSSR
Gate-Body Leakage Current,
Reverse
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
Parameter
Test Conditions
Min
Typ
Max
Units
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
V
DS
= 16 V, V
GS
= 0 V
V
GS
= 8 V, V
DS
= 0 V
20
V
Breakdown Voltage Temperature
14
mV/
°
C
1
μ
A
nA
100
V
GS
= -8 V, V
DS
= 0 V
-100
nA
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 4.5 V, I
D
=7.5 A
V
GS
= 4.5 V, I
D
=7.5 A, T
J
=125
°
C
V
GS
= 2.5 V, I
D
=6.5 A
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 7.5 A
0.5
0.8
-3.5
1.5
V
Gate Threshold Voltage
mV/
°
C
0.013
0.021
0.016
35
0.018
0.034
0.022
A
S
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
20
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
2130
545
270
pF
pF
pF
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
13
26
65
23
23
3.2
4.4
24
42
90
37
32
ns
ns
ns
ns
nC
nC
nC
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
V
DS
= 10 V, I
D
= 7.5 A,
V
GS
= 4.5 V,
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward
Voltage
1.3
1.2
A
V
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
0.65
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