參數(shù)資料
型號(hào)： FDS6162N3
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 21000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： FLMP, SO-8
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 189K
代理商： FDS6162N3
FDS6162N3 Rev B2 (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
GS
= 0 V,
I
D
= 250
μ
A, Referenced to 25
°
C
V
DS
= 16 V,
V
GS
= 12 V,
V
GS
= –12 V ,
I
D
= 250
μ
A
20
V
BV
DSS
T
J
I
DSS
I
GSSF
I
GSSR
13
mV/
°
C
μ
A
nA
nA
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
1
100
–100
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 4.5 V, I
D
= 21 A
V
GS
= 2.5 V, I
D
= 18 A
V
GS
= 4.5 V, I
D
= 21 A, T
J
= 125
°
C
V
DS
= 5 V,
I
D
= 21 A
I
D
= 250
μ
A
0.6
0.9
–4
3.3
4.3
4.8
119
1.5
V
mV/
°
C
m
4.5
6.0
7.2
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
5521
1473
706
1.3
pF
pF
pF
V
DS
= 10 V,
f = 1.0 MHz
V
GS
= 0 V,
V
GS
= 15 mV,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
20
25
85
55
52
9
14.5
32
40
136
88
73
ns
ns
ns
ns
nC
nC
nC
V
DD
= 10 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 10 V,
V
GS
= 4.5 V
I
D
= 21 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
Notes:
2.5
1.2
A
V
nS
nC
V
SD
V
GS
= 0 V,
I
F
= 21 A,
d
iF
/d
t
= 100 A/μs
I
S
= 2.5 A
(Note 2)
0.6
42
52
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a)
40°C/W when
mounted on a 1in
2
pad
of 2 oz copper
b)
85°C/W when mounted on
a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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參數(shù)描述
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FDS6162N7 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 20V 23A 8SOIC
FDS6162N7 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
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