參數(shù)資料
型號(hào)： FDS6064N3
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 小信號(hào)晶體管
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 23000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： FLMP, SO-8
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 189K
代理商： FDS6064N3
FDS6064N3 Rev B2 (W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Min
Typ
Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage V
GS
= 0 V,
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
I
D
= 250
μ
A
20
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25
°
C
V
DS
= 16 V,
V
GS
= 8 V,
V
GS
= –8 V ,
11
mV/
°
C
μ
A
nA
nA
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
1
100
–100
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 4.5 V,
V
GS
= 2.5 V,
V
GS
= 1.8 V,
V
GS
= 4.5 V, I
D
= 23 A,T
J
= 125
°
C
V
DS
= 5 V,
I
D
= 250
μ
A
0.4
0.6
–3
3.4
3.8
4.9
4.5
179
1.5
V
mV/
°
C
m
I
D
= 23 A
I
D
= 22 A
I
D
= 18 A
4
5
7
8
g
FS
Forward Transconductance
I
D
= 23 A
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
7191
1403
703
1.2
pF
pF
pF
V
DS
= 10 V,
f = 1.0 MHz
V
GS
= 0 V,
V
GS
= 15 mV,
f = 1.0 MHz
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
22
22
153
77
70
10
15
35
35
245
123
98
ns
ns
ns
ns
nC
nC
nC
V
DD
= 10 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 10 V,
V
GS
= 4.5 V
I
D
= 23 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
Notes:
2.5
1.2
A
V
nS
nC
V
SD
V
GS
= 0 V,
I
F
= 23 A,
d
iF
/d
t
= 100 A/μs
I
S
= 2.5 A
(Note 2)
0.6
43
55
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a)
40°C/W when
mounted on a 1in
2
pad
of 2 oz copper
b)
85°C/W when mounted on
a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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