參數(shù)資料
型號: FDS5670
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: 60V N-Channel PowerTrench⑩ MOSFET
中文描述: 10000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SO-8
文件頁數(shù): 1/8頁
文件大?。?/td> 250K
代理商: FDS5670
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
60
±
20
10
50
2.5
1.2
1
V
V
A
- Continuous
- Pulsed
(Note 1a)
P
D
Power Dissipation for Single Operation
(Note 1a)
W
(Note 1b)
(Note 1c)
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
50
25
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
FDS5670
Device
FDS5670
Reel Size
13
’’
Tape Width
12mm
Quantity
2500 units
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6
7
8
5
3
2
1
4
S
D
S
S
SO-8
D
D
D
G
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS5670 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8
FDS5670 制造商:Fairchild Semiconductor Corporation 功能描述:SO8 SINGLE NCH 60V
FDS5672 功能描述:MOSFET 60V 12A 10 OHM NCH POWER TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS5680 功能描述:MOSFET SO-8 N-CH 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS5680 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8