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參數(shù)資料
| 型號： | FDS2582 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 12 AMP MINIATURE POWER RELAY |
| 中文描述： | 4.1 A, 150 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 283K |
| 代理商： | FDS2582 |
2002 Fairchild Semiconductor Corporation
September 2002
FDS2582 Rev. B
F
FDS2582
N-Channel PowerTrench
MOSFET
150V, 4.1A, 66m
Features
r
DS(ON)
= 57m
(Typ.), V
GS
= 10V, I
D
= 4.1A
Q
g
(tot) = 19nC (Typ.), V
GS
= 10V
Low Miller Charge
Low Q
RR
Body Diode
Optimized efficiency at high frequencies
UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82855
Applications
DC/DC converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
Direct Injection / Diesel Injection Systems
42V Automotive Load Control
Electronic Valve Train Systems
MOSFET Maximum Ratings
T
A
= 25
°
C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GS
Parameter
Ratings
150
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 10V, R
θ
JA
= 50
o
C/W)
Continuous (T
A
= 100
o
C, V
GS
= 10V, R
θ
JA
= 50
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
4.1
2.6
A
A
A
mJ
W
Figure 4
252
2.5
20
-55 to 150
E
AS
P
D
mW/
o
C
o
C
T
J
, T
STG
R
θ
JA
R
θ
JA
R
θ
JC
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3)
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
Thermal Resistance, Junction to Case (Note 2)
50
80
25
o
C/W
o
C/W
o
C/W
Device Marking
FDS2582
Device
FDS2582
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
4
3
2
1
5
6
7
8
SO-8
Branding Dash
1
5
2
3
4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS2582 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS2582_Q | 功能描述:MOSFET 150V 4.5a .6 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS2670 | 功能描述:MOSFET SO-8 N-CH 200V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS2670 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDS2670_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel PowerTrench MOSFET |
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