參數(shù)資料
型號： FDP79N15_07
廠商： Fairchild Semiconductor Corporation
英文描述： 150V N-Channel MOSFET
中文描述： 150伏N溝道MOSFET
文件頁數(shù)： 1/10頁
文件大小： 360K
代理商： FDP79N15_07
2007 Fairchild Semiconductor Corporation
FDP79N15 / FDPF79N15 Rev. B
1
www.fairchildsemi.com
F
April 2007
UniFET
TM
FDP79N15 / FDPF79N15
150V N-Channel MOSFET
Features
79A, 150V, R
DS(on)
= 0.03
Ω
@V
GS
= 10 V
Low gate charge ( typical 56 nC)
Low Crss ( typical 96pF)
Fast switching
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
TO-220
FDP Series
G
S
D
TO-220F
FDPF Series
G
S
D
D
G
S
Symbol
Parameter
FDP79N15
FDPF79N15
Unit
V
DSS
I
D
Drain-Source Voltage
150
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
79
50
79*
50*
A
A
I
DM
Drain Current
(Note 1)
316
316*
A
V
GSS
E
AS
I
AR
E
AR
dv/dt
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
1669
mJ
Avalanche Current
(Note 1)
79
A
Repetitive Avalanche Energy
(Note 1)
46.3
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
463
3.7
38
0.3
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Symbol
Parameter
FDP79N15
FDPF79N15
Unit
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
0.27
3.3
°
C/W
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°
C/W
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°
C/W
相關PDF資料
PDF描述
FDP79N15 150V N-Channel MOSFET
FDPF79N15 150V N-Channel MOSFET
FDP7N50U 500V N-Channel MOSFET
FDPF7N50U 500V N-Channel MOSFET
FDP7N50 500V N-Channel MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
FDP7N50 功能描述:MOSFET 500V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDP7N50_0704 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET
FDP7N50F 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 500V, 6A, 1.15OHM
FDP7N50U 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET
FDP7N60NZ 功能描述:MOSFET 600V N-Chan MOSFET UniFET-II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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