參數(shù)資料
型號: FDP6676S
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 30V N-Channel PowerTrench SyncFET⑩
中文描述: 76 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220, 3 PIN
文件頁數(shù): 5/6頁
文件大?。?/td> 116K
代理商: FDP6676S
FDP6676S/FDB6676S Rev C (W)
Typical Characteristics
(continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
FDP6676S.
Figure 12. FDP6676S SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDP6676).
C
Time : 12.5ns/div
Figure 13. Non-SyncFET (FDP6676) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.00001
0.0001
0.001
0.01
0.1
0
10
20
30
V
DS
, REVERSE VOLTAGE (V)
I
D
,
T
A
= 100
o
C
T
A
= 25
o
C
Figure 14. SyncFET diode reverse leakage
versus drain-source voltage and
temperature.
F
Time : 12.5ns/div
C
相關PDF資料
PDF描述
FDB6676 30V N-Channel Logic Level PowerTrench MOSFET
FDP6676 30V N-Channel Logic Level PowerTrench MOSFET
FDB6690S 30V N-Channel PowerTrench SyncFET
FDP6690 30V N-Channel PowerTrench SyncFET
FDP6690S 30V N-Channel PowerTrench SyncFET
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