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參數(shù)資料
| 型號(hào)： | FDP55N06 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 60V N-Channel MOSFET |
| 中文描述： | 55 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 1188K |
| 代理商： | FDP55N06 |
3
www.fairchildsemi.com
FDP55N06/FDPF55N06 Rev. A
F
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
10
-1
10
0
10
1
10
0
10
1
10
2
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
* Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
0
10
1
10
2
150
o
C
25
o
C
-55
o
C
* Notes :
1. V
DS
= 30V
2. 250
μ
s Pulse Test
I
D
,
V
GS
, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0
25
50
75
100
125
150
175
200
0.02
0.03
0.04
0.05
V
GS
= 20V
V
GS
= 10V
* Note : T
J
= 25
o
C
R
D
D
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
10
0
10
1
10
2
150
o
C
* Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
25
o
C
I
D
,
V
SD
, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
0
500
1000
1500
2000
2500
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
* Note :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0
5
10
15
20
25
30
0
2
4
6
8
10
12
V
DS
= 30V
V
DS
= 48V
* Note : I
D
= 55A
V
G
,
Q
G
, Total Gate Charge [nC]
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