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參數(shù)資料
| 型號(hào)： | FDP3682 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | 運(yùn)動(dòng)控制電子 |
| 英文描述： | STEREO 200W CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING TECHNOLOGY |
| 中文描述： | 類立體聲功率200W - T的數(shù)字音頻放大器驅(qū)動(dòng)程序使用數(shù)字功率處理技術(shù) |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 278K |
| 代理商： | FDP3682 |
2002 Fairchild Semiconductor Corporation
September 2002
FDB3682 / FDP3682 Rev. B
F
FDB3682 / FDP3682
N-Channel PowerTrench
MOSFET
100V, 32A, 36m
Features
r
DS(ON)
= 32m
(Typ.), V
GS
= 10V, I
D
= 32A
Q
g
(tot) = 18.5nC (Typ.), V
GS
= 10V
Low Miller Charge
Low Q
RR
Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
Formerly developmental type 82755
Applications
DC/DC converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
Direct Injection / Diesel Injection System
42V Automotive Load Control
Electronic Valve Train System
MOSFET Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
Symbol
V
DSS
V
GS
Parameter
Ratings
100
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 10V)
Continuous (T
amb
= 25
o
C, V
GS
= 10V, R
θ
JA
= 43
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
32
23
6
A
A
A
A
Figure 4
55
95
0.63
-55 to 175
E
AS
mJ
W
W/
o
C
o
C
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-220, TO-263
Thermal Resistance Junction to Ambient TO-220, TO-263 (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
1.58
62
43
o
C/W
o
C/W
o
C/W
TO-263AB
FDB SERIES
GATE
SOURCE
DRAIN
(FLANGE)
TO-220AB
FDP SERIES
DRAIN
(FLANGE)
GATE
DRAIN
SOURCE
D
G
S
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDP3682 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDP3682_Q | 功能描述:MOSFET 100V 32a .36Ohm/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP3682_SB82034 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| FDP-36-T | 功能描述:集管和線殼 36pos. DIP Plug .100 x .600 RoHS:否 產(chǎn)品種類:1.0MM Rectangular Connectors 產(chǎn)品類型:Headers - Pin Strip 系列:DF50 觸點(diǎn)類型:Pin (Male) 節(jié)距:1 mm 位置/觸點(diǎn)數(shù)量:16 排數(shù):1 安裝風(fēng)格:SMD/SMT 安裝角:Right 端接類型:Solder 外殼材料:Liquid Crystal Polymer (LCP) 觸點(diǎn)材料:Brass 觸點(diǎn)電鍍:Gold 制造商:Hirose Connector |
| FDP39N20 | 功能描述:MOSFET SINGLE N-CH 200V ULTRAFET TRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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