參數(shù)資料
型號： FDP3652
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： CAP CER .39UF 50V 10% X7R 1206
中文描述： 9 A, 100 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁數(shù)： 8/11頁
文件大?。?/td> 272K
代理商： FDP3652
2002 Fairchild Semiconductor Corporation
FDB3652 / FDP3652 / FDI3652 Rev. B
F
PSPICE Electrical Model
.SUBCKT FDP3652 2 1 3 rev March 2002
Ca 12 8 1.1e-9
Cb 15 14 1.1e-9
Cin 6 8 2.8e-9
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
Ebreak 11 7 17 18 108.2
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
It 8 17 1
Lgate 1 9 7.16e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 2.29e-9
RLgate 1 9 71.6
RLdrain 2 5 10
RLsource 3 7 22.9
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 5.7e-3
Rgate 9 20 1.06
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 6.5e-3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*150),7))}
.MODEL DbodyMOD D (IS=1.5E-11 N=1.06 RS=2.5e-3 TRS1=2.4e-3 TRS2=1.1e-6
+ CJO=1.9e-9 M=5.8e-1 TT=2.5e-8 XTI=3.9)
.MODEL DbreakMOD D (RS=2.7e-1 TRS1=1e-3 TRS2=-8.9e-6)
.MODEL DplcapMOD D (CJO=7e-10 IS=1e-30 N=10 M=0.58)
.MODEL MmedMOD NMOS (VTO=3.6 KP=5.5 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=1.06)
.MODEL MstroMOD NMOS (VTO=4.3 KP=110 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MweakMOD NMOS (VTO=3 KP=0.03 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=1.06e1 RS=.1)
.MODEL RbreakMOD RES (TC1=1.05e-3 TC2=1e-6)
.MODEL RdrainMOD RES (TC1=1.7e-2 TC2=3.2e-5)
.MODEL RSLCMOD RES (TC1=1e-3 TC2=1e-7)
.MODEL RsourceMOD RES (TC1=1e-3 TC2=1e-6)
.MODEL RvthresMOD RES (TC1=-5.3e-3 TC2=-1.2e-5)
.MODEL RvtempMOD RES (TC1=-3.3e-3 TC2=1.3e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-8 VOFF=-5)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-5 VOFF=-8)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1 VOFF=0.5)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0.5 VOFF=-1)
.ENDS
Note: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
19
VBAT
RVTHRES
IT
17
18
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
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FDJ1028N Plug-In Relay; Contacts:DPDT; Contact Carry Current:12A; Coil Voltage AC Max:12V; Relay Mounting:Plug-In; Relay Terminals:8-Pin Octal; Relay Options:Hermetically Sealed; Coil Resistance:72ohm; Contact Carrying Power:1.2W RoHS Compliant: Yes
FDJ1032C Plug-In Relay; Contacts:DPDT; Contact Carry Current:12A; Coil Voltage AC Max:120V; Relay Mounting:Plug-In; Relay Terminals:8-Pin Octal; Relay Options:Hermetically Sealed; Coil Resistance:9100ohm; Contact Carrying Power:1.2W RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDP3652 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-220
FDP3652_NL 制造商:Fairchild 功能描述:100V/61A N-CH MOSFET
FDP3652_Q 功能描述:MOSFET 100V 61a 0.016 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDP3672 功能描述:MOSFET 105V 41a 0.033 Ohms/VGS=10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDP3672_NL 制造商:Fairchild 功能描述:105V/41A N-CH MOSFET
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