參數(shù)資料
型號(hào)： FDN361AN_NL
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： N-Channel Logic Level PowerTrench MOSFET
中文描述： 1800 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-3
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 775K
代理商： FDN361AN_NL
FDN361AN
FDN361AN, Rev. C
FDN361AN
N-Channel, Logic Level, PowerTrenchΤΜ
ΤΜ
General Description
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's PowerTrench process that has
been especially tailored to minimize the on-state resistance
and yet maintain low gate charge for superior switching
performance.
April 1999
Features
1.8 A, 30 V. R
DS(on)
= 0.100
@ V
GS
= 10 V
R
DS(on)
= 0.150
@ V
GS
= 4.5 V.
Low gate charge ( 2.1nC typical ).
Fast switching speed.
High performance trench technology for extremely
low R
DS(on)
.
High power version of industry standard SOT-23
package. Identical pin out to SOT-23 with
30% higher power handling capability.
1998 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
FDN361AN
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage - Continuous
±20
V
ID
Drain Current
- Continuous
(Note 1a)
1.8
A
- Pulsed
8
PD
Power Dissipation for Single Operation
(Note 1a)
0.5
(Note 1b)
0.46
W
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
250
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
75
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
361
FDN361AN
7’’
8mm
3000 units
Applications
DC/DC converter
Load switch
Motor drives
D
S
G
G
D
S
SuperSOT -3
TM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDN361BN 功能描述:MOSFET 30V N-Ch LogicLevel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDN363N 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Fairchild Semiconductor Corporation 功能描述:
FDN371N 功能描述:MOSFET 20V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDN372S 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDN372S_F095 制造商:Fairchild 功能描述:30V/16V, 40/50MO, NCH, SYNCFET
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