參數(shù)資料
型號(hào)： FDMS8672S
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： N-Channel PowerTrench SyncFET 30V, 35A, 5mohm
中文描述： 17 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240AA
封裝： ROHS COMPLIANT, POWER 56, 8 PIN
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 392K
代理商： FDMS8672S
tm
February 2007
F
S
T
2007 Fairchild Semiconductor Corporation
FDMS8672S Rev.C1
www.fairchildsemi.com
1
FDMS8672S
N-Channel PowerTrench
SyncFET
TM
30V, 35A, 5m
Features
Max r
DS(on)
= 5.0m
at V
GS
= 10V, I
D
= 17A
Max r
DS(on)
= 7.0m
at V
GS
= 4.5V, I
D
= 15A
Advanced Package and Silicon combination for low r
DS(on)
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
RoHS Compliant
General Description
The FDMS8672S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
DS(on)
while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Application
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
30
±20
35
90
17
200
50
2.5
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T
C
= 25°C
-Continuous (Silicon limited)
T
C
= 25°C
-Continuous T
A
= 25°C
-Pulsed
Power Dissipation T
C
= 25°C
Power Dissipation T
A
= 25°C (Note 1a)
Operating and Storage Junction Temperature Range
I
D
A
P
D
W
T
J
, T
STG
°
C
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
2.5
°C/W
Thermal Resistance, Junction to Ambient (Note 1a)
50
Device Marking
FDMS8672S
Device
FDMS8672S
Package
Power 56
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
4
3
2
1
5
6
7
8
G
S
S
S
Pin 1
Power 56 (Bottom view)
D
D
D
D
相關(guān)PDF資料
PDF描述
FDMS8674 Diode; Antenna switching; VR (V): 30; IF (mA): 100; Pd (mW): 150; rf (ohm) max: 2.5typ 1.5; Condition IF at rf (mA): 2.0 10; Condition f at rf (MHz): 100; VF (V) max: 1; Condition IF at VF (mA): 10; C (pF) max: 0.31; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: SFP
FDMS8680 N-Channel PowerTrench㈢ MOSFET 30V, 35A, 7.0mヘ
FDMS8690_07 N-Channel Power Trench㈢ MOSFET 30V, 27A, 9.0mз
FDMS8690 N-Channel PowerTrench MOSFET
FDMS8692 N-Channel PowerTrench㈢ MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDMS8674 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS8674_08 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 30V, 21A, 5.0mヘ
FDMS8680 功能描述:MOSFET 30V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS8690 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS8690_07 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:N-Channel Power Trench㈢ MOSFET 30V, 27A, 9.0mз
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