參數(shù)資料
型號(hào)： FDI2532
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 8 A, 150 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
封裝： TO-262AA, 3 PIN
文件頁(yè)數(shù)： 2/11頁(yè)
文件大?。?/td> 275K
代理商： FDI2532
2002 Fairchild Semiconductor Corporation
FDB2532 / FDP2532 / FDI2532 Rev. B
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gs2
Gate Charge Threshold to Plateau
Q
gd
Gate to Drain “Miller” Charge
Resistive Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
= 25°C, L = 0.5 mH, I
AS
= 40A.
2:
Pulse Width = 100s
Device Marking
FDB2532
FDP2532
FDI2532
Device
FDB2532
FDP2532
FDI2532
Package
TO-263AB
TO-220AB
TO-262AB
Reel Size
330mm
Tube
Tube
Tape Width
24mm
N/A
N/A
Quantity
800 units
50 units
50 units
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 120V
V
GS
= 0V
V
GS
=
±
20V
150
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 33A, V
GS
= 10V
I
D
= 16A, V
GS
= 6V,
I
D
= 33A, V
GS
= 10V,
T
C
= 175
o
C
2
-
-
-
4
V
r
DS(ON)
Drain to Source On Resistance
0.014
0.016
0.016
0.024
-
0.040
0.048
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
5870
615
135
82
11
23
13
19
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 75V
I
D
= 33A
I
g
= 1.0mA
107
14
-
-
-
V
DD
= 75V, I
D
= 33A
V
GS
= 10V, R
GS
= 3.6
-
-
-
-
-
-
-
69
-
-
-
-
84
ns
ns
ns
ns
ns
ns
16
30
39
17
-
V
SD
Source to Drain Diode Voltage
I
SD
= 33A
I
SD
= 16A
I
SD
= 33A, dI
SD
/dt= 100A/
μ
s
I
SD
= 33A, dI
SD
/dt= 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
105
327
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovery Charge
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDI2532_Q 功能描述:MOSFET 150V N-Ch UltraFET Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDI33N25 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET
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FDI3632 功能描述:MOSFET 100V 80a 0.009 Ohms/VGS=10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDI3632FS 制造商:Fairchild Semiconductor Corporation 功能描述:
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