參數(shù)資料
型號(hào): FDH50N50
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 500V N-Channel MOSFET
中文描述: 48 A, 500 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝: TO-247AD, 3 PIN
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 222K
代理商: FDH50N50
3
www.fairchildsemi.com
FDH50N50 / FDA50N50 Rev. A
F
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
10
-1
10
0
10
1
10
2
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
!
I
D
,
V
DS
, Drain-Source Voltage [V]
4
5
6
7
8
9
10
0.1
1
10
100
Notes :
1. V
DS
= 40V
2. 250
μ
s Pulse Test
-55
o
C
!
150
o
C
!
25
o
C
!
I
D
V
GS
, Gate-Source Voltage [V]
0
25
50
75
100
125
150
175
0.0
0.1
0.2
0.3
0.4
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
o
C
R
D
]
D
I
D
, Drain Current [A]
0.2
0.4
0.6
V
SD
, Source-Drain Voltage [V]
0.8
1.0
1.2
1.4
1.6
0
40
80
120
160
25
o
C
150
o
C
Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
I
D
10
-1
10
0
10
1
10
2
0
2,000
4,000
6,000
8,000
10,000
12,000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0
20
40
60
80
100
120
0
2
4
6
8
10
12
V
DS
= 250V
V
DS
= 400V
V
DS
= 100V
Note : I
D
= 48A
V
G
,
Q
G
, Total Gate Charge [nC]
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