- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375773 > FDG361N (FAIRCHILD SEMICONDUCTOR CORP) CAP CER 68PF 1KVDC U2J 1206 PDF資料下載
參數(shù)資料
| 型號： | FDG361N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | CAP CER 68PF 1KVDC U2J 1206 |
| 中文描述： | 600 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-70, 6 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 80K |
| 代理商： | FDG361N |
FDG361N Rev C(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= 250
μ
A
100
V
Breakdown Voltage Temperature
I
D
= 250
μ
A,Referenced to 25
°
C
105
mV/
°
C
V
DS
= 80 V,
V
GS
= 20 V,
V
GS
= –20 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
10
100
–100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A,Referenced to 25
°
C
2
2.6
4
V
Gate Threshold Voltage
–5
mV/
°
C
V
GS
= 10 V,
V
GS
= 6 V,
V
GS
= 10 V, I
D
= 0.6 A, T
J
= 125
°
C
V
GS
= 10 V,
V
DS
= 5V,
I
D
= 0.6 A
I
D
= 0.6 A
370
396
685
500
550
976
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
V
DS
= 10 V
I
D
= 0.6 A
2
A
S
3.6
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
153
5
1
pF
pF
pF
V
DS
= 50 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
8
4
11
6
3.7
0.8
1
16
8
20
12
5
ns
ns
ns
ns
nC
nC
nC
V
DD
= 50 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 50 V,
V
GS
= 10 V
I
D
= 0.6 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
0.4
1.2
A
V
V
GS
= 0 V,
I
S
= 0.4 A
(Note 2)
0.8
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a)
300°C/W when
mounted on a 1in
2
pad
of 2 oz copper.
b)
333°C/W when mounted
on a minimum pad of 2 oz
copper.
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
相關PDF資料 |
PDF描述 |
|---|---|
| FDG6301N | Dual N-Channel, Digital FET |
| FDG6302 | Dual P-Channel, Digital FET |
| FDG6302P | Dual P-Channel, Digital FET |
| FDG6303 | Dual N-Channel, Digital FET |
| FDG6303N | Dual N-Channel, Digital FET |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FD-G4 | 制造商:Panasonic Electric Works 功能描述:THRU-BEAM TYPE FIBER |
| FD-G4 | 制造商:Panasonic Electric Works 功能描述:FIBER SENSORM4 DIF. COAXIAL 2M FREE-CU |
| FD-G40 | 制造商:PANASONIC ELECTRIC WORKS - ACSD 功能描述:METAL-FREE FIBER M4 COAX REFLECT 制造商:PANASONIC INDUSTRIAL AUTOMATION SALES 功能描述:METAL-FREE FIBER M4 COAX REFLECT 制造商:Panasonic Electric Works 功能描述:SENSOR, FIBRE OPTIC, REFLECTIVE, 140MM; Fiber Optic Sensor Type:Reflective; Sensing Range Max:140mm; Sensing Range:0mm to 140mm |
| FDG410NZ | 功能描述:MOSFET 20V Single NChannel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG-4A-1600 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Converter |
發(fā)布緊急采購，3分鐘左右您將得到回復。