- 您現(xiàn)在的位置：買賣IC網 > PDF目錄375773 > FDFS6N548 (FAIRCHILD SEMICONDUCTOR CORP) Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30V, 7A, 23mohm PDF資料下載
參數(shù)資料
| 型號： | FDFS6N548 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30V, 7A, 23mohm |
| 中文描述： | 7 A, 30 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOP-8 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 390K |
| 代理商： | FDFS6N548 |
F
M
FDFS6N548 Rev.B
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I
D
= 250
μ
A, V
GS
= 0V
30
V
I
D
= 250
μ
A, referenced to 25°C
22
mV/°
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24V,
V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
1
μ
A
T
J
= 125°C
250
±100
I
GSS
Gate to Source Leakage Current
nA
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 250
μ
A
1.2
1.8
2.5
V
I
D
= 250
μ
A, referenced to 25°C
-5
mV/°C
r
DS(on)
Drain to Source On-Resistance
V
GS
= 10V, I
D
= 7A
V
GS
= 4.5V, I
D
= 6A
V
GS
= 10V, I
D
= 7A, T
J
= 125°C
V
DS
= 5V, I
D
= 7A
19
23
26
20
23
30
31
m
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
525
100
65
0.8
700
133
100
pF
pF
pF
f = 1MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
gs
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
V
DD
= 15V, I
D
= 7A
V
GS
= 10V, R
GEN
= 6
6
2
12
10
25
10
13
ns
ns
ns
ns
nC
nC
14
2
9
1.5
V
DS
= 15V, I
D
= 7A
V
GS
= 10V
Q
gd
Gate to Drain “Miller” Charge
2
nC
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
S
= 7A (Note2)
0.90
23
14
1.25
35
21
V
ns
nC
I
F
= 7A, di/dt = 100A/
μ
s
Schottky Diode Characteristics
V
R
Reverse Breakdown Voltage
I
R
= 1mA
30
V
μ
A
mA
I
R
Reverse Leakage
V
R
= -10V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
39
18
225
140
364
290
250
V
F
Forward Voltage
I
F
= -100mA
280
mV
I
F
= -2A
450
相關PDF資料 |
PDF描述 |
|---|---|
| FDFS6N754 | Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30V, 4A, 56mOHM |
| FDG311N | N-Channel 2.5V Specified PowerTrench MOSFET |
| FDG312P | P-Channel 2.5V Specified PowerTrench⑩ MOSFET |
| FDG313N | Digital FET, N-Channel |
| FDG314P | Digital FET, P-Channel |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDFS6N754 | 功能描述:MOSFET 30V 4A 56OHM NCH POWER TRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG.1B.110.CZZ | 功能描述:環(huán)形推拉式連接器 STRAIGHT PLUG LONG VERSION RoHS:否 制造商:Hirose Connector 產品類型:Connectors 系列:HR10 觸點類型:Socket (Female) 外殼類型:Receptacle 觸點數(shù)量:4 外殼大小:7 安裝風格:Panel 端接類型:Solder 電流額定值:2 A |
| FDG.1B.155.LNN | 功能描述:環(huán)形推拉式連接器 STRAIGHT PLUG LONG VERSION RoHS:否 制造商:Hirose Connector 產品類型:Connectors 系列:HR10 觸點類型:Socket (Female) 外殼類型:Receptacle 觸點數(shù)量:4 外殼大小:7 安裝風格:Panel 端接類型:Solder 電流額定值:2 A |
| FDG.1B.304.CLAD52 | 功能描述:環(huán)形推拉式連接器 STRAIGHT PLUG LONG VERSION RoHS:否 制造商:Hirose Connector 產品類型:Connectors 系列:HR10 觸點類型:Socket (Female) 外殼類型:Receptacle 觸點數(shù)量:4 外殼大小:7 安裝風格:Panel 端接類型:Solder 電流額定值:2 A |
| FDG.1B.306.CLAD76 | 功能描述:環(huán)形推拉式連接器 STRAIGHT PLUG LONG VERSION RoHS:否 制造商:Hirose Connector 產品類型:Connectors 系列:HR10 觸點類型:Socket (Female) 外殼類型:Receptacle 觸點數(shù)量:4 外殼大小:7 安裝風格:Panel 端接類型:Solder 電流額定值:2 A |
發(fā)布緊急采購，3分鐘左右您將得到回復。