參數資料
型號： FDFMA2P853
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： Integrated P-Channel PowerTrench MOSFET and Schottky Diode
中文描述： 2200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-229VCCC
封裝： 2 X 2 MM, 0.80 MM HEIGHT, ROHS COMPLIANT, MICROFET-6
文件頁數： 4/7頁
文件大?。?/td> 307K
代理商： FDFMA2P853
F
FDFMA2P853 Rev. C (W)
4
Typical Characteristics
Figure 1.
0
1
2
3
4
5
6
0
0.5
1
1.5
2
2.5
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
-2.5V
-2.0V
V
GS
= -4.5V
-3.0V
-3.5V
-1.8V
-1.5V
On-Region Characteristics
Figure 2.
Drain Current and Gate Voltage
0.6
1
1.4
1.8
2.2
2.6
3
0
1
2
3
4
5
6
-I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= -1.5V
-3.5V
-4.5V
-3.0V
-1.8V
-2.5V
-2.0V
On-Resistance Variation with
Figure 3.
0.8
0.9
1
1.1
1.2
1.3
1.4
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
C)
R
D
,
I
D
= -3.0A
V
GS
= -4.5V
On-Resistance Variation with
Temperature
Figure 4.
0.04
0.1
0.16
0.22
0.28
0
2
-V
GS
, GATE TO SOURCE VOLTAGE (V)
4
6
8
10
R
D
,
I
D
= -1.5A
T
A
= 125
o
C
T
A
= 25
o
C
On-Resistance Variation with
Gate-to-Source Voltage
Figure 5. Transfer Characteristics
0
1
2
3
4
5
6
0
0.5
1
1.5
2
2.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= -5V
Figure 6.
0.0001
0.001
0.01
0.1
1
10
0
0.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
-
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Body Diode Forward Voltage Variation
with Source Current and Temperature
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相關代理商/技術參數
參數描述
FDFMA2P853_06 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode
FDFMA2P853_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode
FDFMA2P853T 功能描述:MOSFET MOSFET/Schottky -20V Int. PCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDFMA2P857 功能描述:MOSFET 20V P-Ch Shtky Diode PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDFMA2P857_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.0A, 120mヘ
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