參數(shù)資料
型號(hào): FDFMA2N028Z
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: Integrated N-Channel PowerTrench MOSFET and Schottky Diode
中文描述: 3700 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: 2 X 2 MM, 0.8 MM HEIGHT, ROHS COMPLIANT, MICROFET-6
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 360K
代理商: FDFMA2N028Z
F
FDFMA2N028Z Rev.B
www.fairchildsemi.com
3
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Notes:
1:
R
is determined with the device mounted on a 1in
2
pad 2 oz. copper pad on a 1.5
x 1.5 in. board of FR-4 material. R
θ
JC
is guaranteed by design while
R
θ
JA
is determined
by the user's board design.
(a) MOSFET
R
θ
JA
= 86
C/W when mounted on a 1in
2
pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB.
(b) MOSFET
R
θ
JA
= 173
o
C/W when mounted on a minimum
pad of 2 oz copper.
(c) Schottky
R
θ
JA
= 86
o
C/W when mounted on a 1in
2
pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB.
(d) Schottky
R
θ
JA
= 140
o
C/W when mounted on a minimum
pad of 2 oz copper.
2:
Pulse Test: Pulse Width < 30
0
μ
s, Duty cycle < 2.0%.
a)86
o
C/W
when mounted
on a 1in
pad of
2 oz copper.
b)173
o
C/W
when mounted
on a minimum
pad of 2 oz
copper.
c)86
o
C/W when
mounted on a
1in
pad of 2 oz
copper.
d)140
o
C/W
when mounted
on a minimum
pad of 2 oz
copper.
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