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參數(shù)資料
| 型號： | FDFM2P110 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Integrated P-Channel PowerTrench MOSFET and Schottky Diode |
| 中文描述： | 3.5 A, 20 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, MO-229WEEA |
| 封裝： | 3 X 3 MM, MLP-6 |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 289K |
| 代理商： | FDFM2P110 |
F
FDFM2N111 Rev.
C2
(W)
5
Figure 7.
0
1
2
3
4
5
6
0
1
2
3
4
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 4A
V
DS
= 5V
15V
10V
Gate Charge Characteristics
Figure 8.
0
50
100
150
200
250
300
350
400
0
4
8
12
16
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Capacitance Characteristics
Figure 9.
0.001
0.01
0.1
1
10
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V
F
, FORWARD VOLTAGE (V)
I
F
,
T
J
= 25
o
C
T
J
= 125
o
C
Schottky Diode Forward Voltage
Figure 10.
0.000001
0.00001
0.0001
0.001
0.01
0.1
0
5
10
15
20
V
R
, REVERSE VOLTAGE (V)
I
R
,
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 100
o
C
Schottky Diode Reverse Current
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Typical Characteristics
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDFM2P110_0508 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode |
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| FD-FM2S4 | 制造商:Panasonic Electric Works 功能描述:THRU-BEAM TYPE FIBER |
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